聚合物合成路线和有机组分含量对碳化硅陶瓷结构和孔隙率的影响

IF 0.9 4区 材料科学 Q3 MATERIALS SCIENCE, CERAMICS
B. Costa, M.I.A. De Silva, C. Tarley, E. Ribeiro, M. Segatelli
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引用次数: 0

摘要

本文研究了由三种不同的杂化聚合物通过不同的热解温度制备的碳化硅陶瓷的结构和结构特征。第一种聚合物是由聚氢甲基硅氧烷和二乙烯基苯按化学计量比例进行硅氢化反应制备的;第二种合成方法类似,但加入了过量的二乙烯基苯(60 wt.%),第三种合成方法也加入了60 wt.%的二乙烯基苯,同时进行了硅氢化反应和自由基反应。前驱体在1000、1200和1500℃氩气下进行热解。C生产碳化硅基陶瓷。无序和有序残余碳分数影响碳化硅相发育和反硝化阻力,而有序残余碳分数与聚合物结构直接相关。富c陶瓷在1500℃时获得了较高的比表面积和孔体积值。由含聚二乙烯基苯网络的前驱体衍生而来。碳化硅氧基是由含有石墨碳相和碳化硅相以及不同孔隙率的杂化聚合物衍生而来,揭示了电化学应用和吸附剂系统的理想特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of polymer synthesis route and organic fraction content on structure and porosity of silicon oxycarbide ceramics
This paper describes the structural and textural characteristics of silicon oxycarbide ceramics obtained from three different hybrid polymers by varying pyrolysis temperature. The first polymer was prepared by hydrosilylation between poly(hydromethylsiloxane) and divinylbenzene in stoichiometric proportions; the second was similarly obtained, but with excess of divinylbenzene (60 wt.%) and the third was also synthesized with 60 wt.% divinylbenzene, involving simultaneously hydrosilylation and radical reactions. Precursors were pyrolysed under argon at 1000, 1200 and 1500?C to produce silicon oxycarbide-based ceramics. Silicon carbide phase development and devitrification resistance were influenced by the disordered and ordered residual carbon fraction, which was directly related to the polymer structure. High specific surface area and pore volume values were obtained in C-richer ceramics at 1500?C derived from poly(divinylbenzene) network-containing precursor. Silicon oxycarbide matrices, derived from hybrid polymers containing graphitic carbon and silicon carbide phases together with different amount of porosity, revealed desirable features for electrochemical applications and adsorbent systems.
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来源期刊
Processing and Application of Ceramics
Processing and Application of Ceramics MATERIALS SCIENCE, CERAMICS-
CiteScore
1.90
自引率
9.10%
发文量
14
审稿时长
10 weeks
期刊介绍: Information not localized
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