采用不同溅射功率制备Ta掺杂TiN薄膜的结构与性能

IF 0.9 4区 材料科学 Q3 MATERIALS SCIENCE, CERAMICS
Yue-Sheng Wang, Xin Shi, Miaomiao Liu, Yifa Yang, Qilong Gao, B. Zhu, L. Xu
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引用次数: 0

摘要

采用直流磁控共溅射技术在玻璃衬底上制备了掺Ta的TiN薄膜。采用x射线衍射、拉曼光谱、紫外/可见/近红外分光光度计和四探针法对制备的(Ti,Ta)N薄膜的结构和性能进行了表征。结果表明:随着Ta靶材溅射功率(PTa)的增加,TiN晶格中Ta的加入量增加,导致薄膜中TiN晶格发生轻微畸变和应力转变;相应地,薄膜的光学和电学性质也发生了变化。拉曼光谱解卷积成50 ~ 1400cm ?由于Ti被Ta取代,在所有样品中都出现了一个新的拉曼峰。反褶积分析结果表明,不同声子模式的峰值位置和FWHM发生了变化,这可能与在TiN晶格中加入Ta引起薄膜应力的变化有关。50W功率制备的样品在2.5 m和25 μ m波长处的最大红外发射率分别为1.35和0.43,表明(Ti,Ta)N薄膜是替代Low-E玻璃中TiN的有希望的候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structure and properties of Ta doped TiN films prepared using different sputtering powers for Ta target
Ta doped TiN films were prepared on glass substrates by DC magnetron co-sputtering. The structure and properties of the obtained (Ti,Ta)N film were characterized by X-ray diffraction, Raman spectroscopy, ultraviolet/visible/near-infrared spectrophotometer and four probes method. The results show that with the increase of the sputtering power (PTa) for Ta target, the amount of Ta added to TiN lattice increases, resulting in a slight distortion of TiN lattice and stress transformation in the film. Correspondingly, the optical and electrical properties of the film changed. Raman spectrum was deconvoluted into five Lorentz peaks in the range of 50-1400 cm?1 and a new Raman peak appeared in all samples due to the substitution of Ta for Ti. The analysis of deconvolution results shows that the peak positions of different phonon modes and FWHM change, which may be related to the change of stress in the thin films caused by adding Ta to TiN lattice. The sample prepared with power of 50W has the maximum infrared emissivity of 1.35 and 0.43 at 2.5 and 25 ?m wavelengths, respectively, indicating that (Ti,Ta)N film is promising candidate for replacing TiN in Low-E glass.
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来源期刊
Processing and Application of Ceramics
Processing and Application of Ceramics MATERIALS SCIENCE, CERAMICS-
CiteScore
1.90
自引率
9.10%
发文量
14
审稿时长
10 weeks
期刊介绍: Information not localized
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