基于降阶模型的IGBT温度场监测

Ziyu Zhou;Yi Sui;Xu Zhang;Chengde Tong;Ping Zheng;Mingjun Zhu
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摘要

随着世界经济的快速发展,IGBT在电机驱动和电能转换方面得到了广泛的应用。为了及时检测IGBT的疲劳损伤,有必要对IGBT的结温进行监测。为了实现IGBT结温的快速计算,本文提出了一种IGBT温度场降低的有限元方法。首先,介绍了IGBT温度场的有限元计算过程,推导了温度场有限元计算的线性方程。通过有限元模拟得到不同工况下的温度场数据,形成样本空间。然后构造样本空间的协方差矩阵,对其进行适当的正交分解和模态提取。选择合理的基向量空间,完成样本空间内外温度向量的低维表达。最后,得到了温度场有限元的降阶模型并进行了求解。将降阶模型的结果与有限元法的结果进行了比较,并从精度和快速性两个方面对降阶模型进行了性能评价。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
IGBT Temperature Field Monitoring Based on Reduced-order Model
With the rapid development of the world economy, IGBT has been widely used in motor drive and electric energy conversion. In order to timely detect the fatigue damage of IGBT, it is necessary to monitor the junction temperature of IGBT. In order to realize the fast calculation of IGBT junction temperature, a finite element method of IGBT temperature field reduction is proposed in this paper. Firstly, the finite element calculation process of IGBT temperature field is introduced and the linear equations of finite element calculation of temperature field are derived. Temperature field data of different working conditions are obtained by finite element simulation to form the sample space. Then the covariance matrix of the sample space is constructed, whose proper orthogonal decomposition and modal extraction are carried out. Reasonable basis vector space is selected to complete the low dimensional expression of temperature vector inside and outside the sample space. Finally, the reduced-order model of temperature field finite element is obtained and solved. The results of the reduced order model are compared with those of the finite element method, and the performance of the reduced-order model is evaluated from two aspects of accuracy and rapidity.
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