6T与9T SRAM集成电路的性能比较分析:SOI与Bulk

IF 0.9 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Qazi Mashaal Khan;Richard Perdriau;Mohamed Ramdani;Mohsen Koohestani
{"title":"6T与9T SRAM集成电路的性能比较分析:SOI与Bulk","authors":"Qazi Mashaal Khan;Richard Perdriau;Mohamed Ramdani;Mohsen Koohestani","doi":"10.1109/LEMCPA.2022.3163963","DOIUrl":null,"url":null,"abstract":"This letter evaluates the performance of 6T & 9T static random access memory (SRAM) cells, for data stability and power metrics, with the aim to compare silicon-on-insulator (SOI) and bulk CMOS technologies. Each SRAM topology was designed & simulated in 180 nm 5 V XFAB-SOI and AMS-bulk processes, using optimized parameters and compatible devices. The fundamental variables analyzed were read noise margins, write trip current & voltage as well as leakage current (LC) and static power dissipation (SPD) under process and temperature (PT) variations. The static noise margin (SNM) butterfly curve and N-curve methodologies were used to assess the mentioned parameters. Compared to bulk technology, the SRAM cells designed with SOI were found to have lower SPD & LC, higher data stability, lower write ability, larger sensitivity to process variations and higher resilience to temperature deviations.","PeriodicalId":100625,"journal":{"name":"IEEE Letters on Electromagnetic Compatibility Practice and Applications","volume":"4 2","pages":"25-30"},"PeriodicalIF":0.9000,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Comparative Performance Analysis of 6T & 9T SRAM Integrated Circuits: SOI vs. Bulk\",\"authors\":\"Qazi Mashaal Khan;Richard Perdriau;Mohamed Ramdani;Mohsen Koohestani\",\"doi\":\"10.1109/LEMCPA.2022.3163963\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter evaluates the performance of 6T & 9T static random access memory (SRAM) cells, for data stability and power metrics, with the aim to compare silicon-on-insulator (SOI) and bulk CMOS technologies. Each SRAM topology was designed & simulated in 180 nm 5 V XFAB-SOI and AMS-bulk processes, using optimized parameters and compatible devices. The fundamental variables analyzed were read noise margins, write trip current & voltage as well as leakage current (LC) and static power dissipation (SPD) under process and temperature (PT) variations. The static noise margin (SNM) butterfly curve and N-curve methodologies were used to assess the mentioned parameters. Compared to bulk technology, the SRAM cells designed with SOI were found to have lower SPD & LC, higher data stability, lower write ability, larger sensitivity to process variations and higher resilience to temperature deviations.\",\"PeriodicalId\":100625,\"journal\":{\"name\":\"IEEE Letters on Electromagnetic Compatibility Practice and Applications\",\"volume\":\"4 2\",\"pages\":\"25-30\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2022-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Letters on Electromagnetic Compatibility Practice and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/9747925/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Letters on Electromagnetic Compatibility Practice and Applications","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/9747925/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 3

摘要

这封信评估了6T和9T静态随机存取存储器(SRAM)单元在数据稳定性和功率指标方面的性能,目的是比较绝缘体上硅(SOI)和体CMOS技术。每个SRAM拓扑结构都是在180 nm 5V XFAB-SOI和AMS批量工艺中设计和模拟的,使用优化的参数和兼容的设备。分析的基本变量是读取噪声裕度、写入跳闸电流和电压以及工艺和温度(PT)变化下的漏电流(LC)和静态功耗(SPD)。静态噪声裕度(SNM)蝶形曲线和N曲线方法用于评估上述参数。与块体技术相比,使用SOI设计的SRAM单元具有更低的SPD和LC、更高的数据稳定性、更低的写入能力、更大的工艺变化敏感性和更高的温度偏差弹性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Comparative Performance Analysis of 6T & 9T SRAM Integrated Circuits: SOI vs. Bulk
This letter evaluates the performance of 6T & 9T static random access memory (SRAM) cells, for data stability and power metrics, with the aim to compare silicon-on-insulator (SOI) and bulk CMOS technologies. Each SRAM topology was designed & simulated in 180 nm 5 V XFAB-SOI and AMS-bulk processes, using optimized parameters and compatible devices. The fundamental variables analyzed were read noise margins, write trip current & voltage as well as leakage current (LC) and static power dissipation (SPD) under process and temperature (PT) variations. The static noise margin (SNM) butterfly curve and N-curve methodologies were used to assess the mentioned parameters. Compared to bulk technology, the SRAM cells designed with SOI were found to have lower SPD & LC, higher data stability, lower write ability, larger sensitivity to process variations and higher resilience to temperature deviations.
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