缓冲层和帽层对缓冲层/CoFeB/MgO/帽结构热稳定垂直磁各向异性的影响

IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Wei Du;Mengli Liu;Fengxuan Han;Hua Su;Bo Liu;Hao Meng;Xiaoli Tang
{"title":"缓冲层和帽层对缓冲层/CoFeB/MgO/帽结构热稳定垂直磁各向异性的影响","authors":"Wei Du;Mengli Liu;Fengxuan Han;Hua Su;Bo Liu;Hao Meng;Xiaoli Tang","doi":"10.1109/LMAG.2022.3221050","DOIUrl":null,"url":null,"abstract":"In this letter, we study the effect of buffer and cap layers on thermally stable perpendicular magnetic anisotropy (PMA) in a buffer/CoFeB/MgO/cap structure. Not only is the buffer layer crucial, but the type of cap layer also affects the thermal stability of PMA. Relative to the Ta samples, the W samples that adopt a W buffer or cap layer acquire a wider PMA thickness range for further increasing the PMA thermal stability in magnetic random-access memory applications. And similarly for the W buffer layer, the annealing temperature for the W cap layer also increases by 30 °C (from 270 °C to 300 °C). Via detailed anomalous Hall effect measurements, the thermal stability of PMA in buffer/CoFeB/MgO/cap was investigated. This work provides a promising way to obtain high thermal stability of PMA in CoFeB-MgO-based spintronic applications, and it is significant for designing next-generation information storage devices.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2022-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Buffer and Cap Layer on Thermally Stable Perpendicular Magnetic Anisotropy in Buffer/CoFeB/MgO/Cap Structure\",\"authors\":\"Wei Du;Mengli Liu;Fengxuan Han;Hua Su;Bo Liu;Hao Meng;Xiaoli Tang\",\"doi\":\"10.1109/LMAG.2022.3221050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, we study the effect of buffer and cap layers on thermally stable perpendicular magnetic anisotropy (PMA) in a buffer/CoFeB/MgO/cap structure. Not only is the buffer layer crucial, but the type of cap layer also affects the thermal stability of PMA. Relative to the Ta samples, the W samples that adopt a W buffer or cap layer acquire a wider PMA thickness range for further increasing the PMA thermal stability in magnetic random-access memory applications. And similarly for the W buffer layer, the annealing temperature for the W cap layer also increases by 30 °C (from 270 °C to 300 °C). Via detailed anomalous Hall effect measurements, the thermal stability of PMA in buffer/CoFeB/MgO/cap was investigated. This work provides a promising way to obtain high thermal stability of PMA in CoFeB-MgO-based spintronic applications, and it is significant for designing next-generation information storage devices.\",\"PeriodicalId\":13040,\"journal\":{\"name\":\"IEEE Magnetics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2022-11-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Magnetics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/9944139/\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Magnetics Letters","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/9944139/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

在这封信中,我们研究了缓冲层和盖层对缓冲层/CoFeB/MgO/盖结构中热稳定垂直磁各向异性(PMA)的影响。缓冲层不仅至关重要,而且覆盖层的类型也影响PMA的热稳定性。相对于Ta样品,采用W缓冲层或盖层的W样品获得了更宽的PMA厚度范围,以进一步提高磁性随机存取存储器应用中的PMA热稳定性。类似地,对于W缓冲层,W覆盖层的退火温度也增加了30°C(从270°C增加到300°C)。通过详细的反常霍尔效应测量,研究了PMA在缓冲区/CoFeB/MgO/cap中的热稳定性。这项工作为在基于CoFeB-MgO的自旋电子应用中获得PMA的高热稳定性提供了一种很有前途的方法,对设计下一代信息存储设备具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Buffer and Cap Layer on Thermally Stable Perpendicular Magnetic Anisotropy in Buffer/CoFeB/MgO/Cap Structure
In this letter, we study the effect of buffer and cap layers on thermally stable perpendicular magnetic anisotropy (PMA) in a buffer/CoFeB/MgO/cap structure. Not only is the buffer layer crucial, but the type of cap layer also affects the thermal stability of PMA. Relative to the Ta samples, the W samples that adopt a W buffer or cap layer acquire a wider PMA thickness range for further increasing the PMA thermal stability in magnetic random-access memory applications. And similarly for the W buffer layer, the annealing temperature for the W cap layer also increases by 30 °C (from 270 °C to 300 °C). Via detailed anomalous Hall effect measurements, the thermal stability of PMA in buffer/CoFeB/MgO/cap was investigated. This work provides a promising way to obtain high thermal stability of PMA in CoFeB-MgO-based spintronic applications, and it is significant for designing next-generation information storage devices.
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来源期刊
IEEE Magnetics Letters
IEEE Magnetics Letters PHYSICS, APPLIED-
CiteScore
2.40
自引率
0.00%
发文量
37
期刊介绍: IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest. IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.
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