用于毫米波硅基锁相环频率合成器的37 GHz宽带可编程分频器

Ting Guo, Zhiqun Li, Qin Li, Zhi-Gong Wang
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引用次数: 1

摘要

采用标准的90 nm CMOS技术,设计并制造了一种37 GHz宽带可编程分频器(FD),该分频器由一个2分频器(作为一级)和一个分频比范围为273-330的分频器(作为二级)组成。第二级分频器由高速除8/9双模预分频器、脉冲计数器和燕子计数器组成。第一级分频器(高速分频)和除以8/9分频器均采用动态电流模式逻辑(DCML)结构,提高了工作性能。第一级分频器可以工作在2到40 GHz,整个分频器覆盖25到37 GHz的宽频率范围。在32ghz时,输入灵敏度低至−20dbm,在偏移1mhz时,37 GHz时的相位噪声小于−130dbc /Hz。整个芯片在1.2 V电源电压下的功耗为17.88 mW,占地面积仅为730 μm ×475 μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 37 GHz wide-band programmable divide-by-N frequency divider for millimeter-wave silicon-based phase-locked loop frequency synthesizers
A 37 GHz wide-band programmable divide-by-N frequency divider (FD) composed of a divide-by-2 divider (acting as the first stage) and a divider with a division ratio range of 273–330 (acting as the second stage) has been designed and fabricated using standard 90 nm CMOS technology. The second stage divider consists of a high-speed divide-by-8/9 dual-modulus prescaler, a pulse counter, and a swallow counter. Both the first stage divider (with high speed) and the divide-by-8/9 prescaler employ dynamic current-mode logic (DCML) structure to improve the operating performance. The first stage divider can work from 2 to 40 GHz and the whole divider covers a wide frequency range from 25 to 37 GHz. The input sensitivity is as low as −20 dBm at 32 GHz and the phase noise at 37 GHz is less than −130 dBc/Hz at an offset of 1 MHz. The whole chip dissipates 17.88 mW at a supply voltage of 1.2 V and occupies an area of only 730 μm ×475 μm.
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