半导体量子阱中马汉激子光谱的干涉效应

S. Katayama
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引用次数: 2

摘要

从理论上研究了调制掺杂n型半导体量子阱结构的光吸收光谱。结果表明,光激发空穴与n=1导子带中电子海的有效库仑相互作用,通过与未占据的高子带相关的二维氢激子态,在马汉激子的连续尾上产生新的子带干涉结构。采用材料参数对砷化镓吸收光谱的计算结果清楚地表明了这种影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interference Effects on Optical Spectra of Mahan Exciton in Semiconductor Quantum Wells
Optical absorption spectra of modulation-doped n-type semiconductor quantum-well structures are studied theoretically. It is shown that effective Coulomb interaction of a photo-excited hole with the sea of electrons in n=1 conduction-subband via 2D hydrogenic exciton states associated with the unoccupied higher subbands yields an appearance of new subband interference structure on the continuous tail of the Mahan exciton. Numerical results with use of material parameters for GaAs exhibit clearly such effects on the calculated absorption spectra.
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