基于缓冲延迟模型的触发脉冲发生器及其应用

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Amit Krishna Dwivedi, Kumar Abhijeet Urma, A. Islam
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引用次数: 11

摘要

本文提出了一种集成皮秒级缓冲延迟的电路。为了更深入地研究我们提出的电路,我们还利用FinFET和CNFET等新兴技术探索了我们提出的电路。这些技术在不同参数方面进行了比较,例如合并延迟的持续时间(脉冲宽度)及其随电源电压的可变性。在此基础上,提出了一种以所提出的缓冲延迟电路为基本元件的触发脉冲发生器。所提出的触发脉冲发生器的参数结果符合不同应用的具体要求。本文还介绍了这些应用。所提出的触发脉冲发生器需要非常低的电源电压(700 mV),并且在所产生脉冲的脉宽可调性方面也证明了其有效性。利用Verilog对电路进行了建模,并利用SPICE对仿真结果进行了广泛的验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Trigger Pulse Generator Using Proposed Buffered Delay Model and Its Application
This paper proposes a circuit capable of incorporating buffered delays in the order of picoseconds. To study our proposed circuit in the profound way, we have also explored our proposed circuit using emerging technologies such as FinFET and CNFET. Comparisons between these technologies have been made in terms of different parameters such as duration of incorporated delays (pulse width) and its variability with supply voltages. Further, this paper also proposes a trigger pulse generator by utilizing proposed buffered delay circuit as its basic element. Parametric results obtained for the proposed trigger pulse generator match different application specific requirements. These applications are also mentioned in this paper. The proposed trigger pulse generator requires very low supply voltage (700 mV) and also proves its effectiveness in terms of tunability of pulse width of the generated pulses. The modeling of the circuit has been done using Verilog and the simulation results are extensively verified using SPICE.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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