低暗电流台面型海藻火焰探测器

4区 材料科学 Q2 Engineering
Lung-Chien Chen
{"title":"低暗电流台面型海藻火焰探测器","authors":"Lung-Chien Chen","doi":"10.1155/2007/62825","DOIUrl":null,"url":null,"abstract":"This study characterizes and reports on the fabrication process of AlGaN flame photodetectors with an Al0.1Ga0.9N/GaN superlattice structure. The AlGaN flame photodetectors exhibited a low dark current (∼1.17×10−10 A at bias of −5 V) and large rejection ratio of photocurrent (∼2.14×10−5 A at bias of -5 V) to dark current, which is greater than five orders of magnitude. Responsivity at 350 nm at a bias of -5 V was 0.194 A/W. Quantum efficiency, η, was 0.687 at a reverse bias of 5 V.","PeriodicalId":7345,"journal":{"name":"Advances in Materials Science and Engineering","volume":"2007 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2007/62825","citationCount":"0","resultStr":"{\"title\":\"Low Dark Current Mesa-Type AlGaN Flame Detectors\",\"authors\":\"Lung-Chien Chen\",\"doi\":\"10.1155/2007/62825\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study characterizes and reports on the fabrication process of AlGaN flame photodetectors with an Al0.1Ga0.9N/GaN superlattice structure. The AlGaN flame photodetectors exhibited a low dark current (∼1.17×10−10 A at bias of −5 V) and large rejection ratio of photocurrent (∼2.14×10−5 A at bias of -5 V) to dark current, which is greater than five orders of magnitude. Responsivity at 350 nm at a bias of -5 V was 0.194 A/W. Quantum efficiency, η, was 0.687 at a reverse bias of 5 V.\",\"PeriodicalId\":7345,\"journal\":{\"name\":\"Advances in Materials Science and Engineering\",\"volume\":\"2007 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1155/2007/62825\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Materials Science and Engineering\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1155/2007/62825\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Materials Science and Engineering","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1155/2007/62825","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0

摘要

本文研究并报道了Al0.1Ga0.9N/GaN超晶格结构的AlGaN火焰光电探测器的制备过程。AlGaN火焰光电探测器具有较低的暗电流(−1.17×10−10 a,偏置为−5 V)和较大的光电流(−2.14×10−5 a,偏置为-5 V)对暗电流的抑制比,大于5个数量级。在-5 V偏置下,350 nm处的响应度为0.194 a /W。在反向偏置5 V时,量子效率η为0.687。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low Dark Current Mesa-Type AlGaN Flame Detectors
This study characterizes and reports on the fabrication process of AlGaN flame photodetectors with an Al0.1Ga0.9N/GaN superlattice structure. The AlGaN flame photodetectors exhibited a low dark current (∼1.17×10−10 A at bias of −5 V) and large rejection ratio of photocurrent (∼2.14×10−5 A at bias of -5 V) to dark current, which is greater than five orders of magnitude. Responsivity at 350 nm at a bias of -5 V was 0.194 A/W. Quantum efficiency, η, was 0.687 at a reverse bias of 5 V.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Advances in Materials Science and Engineering
Advances in Materials Science and Engineering Materials Science-General Materials Science
CiteScore
3.30
自引率
0.00%
发文量
0
审稿时长
4-8 weeks
期刊介绍: Advances in Materials Science and Engineering is a broad scope journal that publishes articles in all areas of materials science and engineering including, but not limited to: -Chemistry and fundamental properties of matter -Material synthesis, fabrication, manufacture, and processing -Magnetic, electrical, thermal, and optical properties of materials -Strength, durability, and mechanical behaviour of materials -Consideration of materials in structural design, modelling, and engineering -Green and renewable materials, and consideration of materials’ life cycles -Materials in specialist applications (such as medicine, energy, aerospace, and nanotechnology)
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信