Chaoyang Li, M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta, T. Hirao
{"title":"射频功率和热退火对射频磁控溅射制备氧化锌薄膜性能的影响","authors":"Chaoyang Li, M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta, T. Hirao","doi":"10.1155/2007/26459","DOIUrl":null,"url":null,"abstract":"Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron \nsputtering under different powers. The XRD results showed that ZnO crystallite size along \nc-axis decreased by 43% with deposition power increased from 60 W \nto 300 W, increased 36% with annealing temperature rising to 400 ∘ C . TDS \nmeasurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) \nand oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were \noriginated from 300 ∘ C . When annealing temperature was higher than 300 ∘ C , the sheet \nresistance dramatically decreased, and compressive stress in the (002) plane changed to \ntensile stress as well. The comparison measurements of ZnO films crystallinity strongly \nsuggested that both lower deposition power and certain thermal annealing temperature \nover 300 ∘ C would contribute to the formation of high quality ZnO films.","PeriodicalId":7345,"journal":{"name":"Advances in Materials Science and Engineering","volume":"2007 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2007/26459","citationCount":"9","resultStr":"{\"title\":\"RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering\",\"authors\":\"Chaoyang Li, M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta, T. Hirao\",\"doi\":\"10.1155/2007/26459\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron \\nsputtering under different powers. The XRD results showed that ZnO crystallite size along \\nc-axis decreased by 43% with deposition power increased from 60 W \\nto 300 W, increased 36% with annealing temperature rising to 400 ∘ C . TDS \\nmeasurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) \\nand oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were \\noriginated from 300 ∘ C . When annealing temperature was higher than 300 ∘ C , the sheet \\nresistance dramatically decreased, and compressive stress in the (002) plane changed to \\ntensile stress as well. The comparison measurements of ZnO films crystallinity strongly \\nsuggested that both lower deposition power and certain thermal annealing temperature \\nover 300 ∘ C would contribute to the formation of high quality ZnO films.\",\"PeriodicalId\":7345,\"journal\":{\"name\":\"Advances in Materials Science and Engineering\",\"volume\":\"2007 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1155/2007/26459\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Materials Science and Engineering\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1155/2007/26459\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Materials Science and Engineering","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1155/2007/26459","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}
RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering
Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron
sputtering under different powers. The XRD results showed that ZnO crystallite size along
c-axis decreased by 43% with deposition power increased from 60 W
to 300 W, increased 36% with annealing temperature rising to 400 ∘ C . TDS
measurement revealed that the desorption peaks of both atomic Zn (60 W-deposited)
and oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were
originated from 300 ∘ C . When annealing temperature was higher than 300 ∘ C , the sheet
resistance dramatically decreased, and compressive stress in the (002) plane changed to
tensile stress as well. The comparison measurements of ZnO films crystallinity strongly
suggested that both lower deposition power and certain thermal annealing temperature
over 300 ∘ C would contribute to the formation of high quality ZnO films.
期刊介绍:
Advances in Materials Science and Engineering is a broad scope journal that publishes articles in all areas of materials science and engineering including, but not limited to:
-Chemistry and fundamental properties of matter
-Material synthesis, fabrication, manufacture, and processing
-Magnetic, electrical, thermal, and optical properties of materials
-Strength, durability, and mechanical behaviour of materials
-Consideration of materials in structural design, modelling, and engineering
-Green and renewable materials, and consideration of materials’ life cycles
-Materials in specialist applications (such as medicine, energy, aerospace, and nanotechnology)