{"title":"电子回旋共振等离子溅射制备高硬度类富勒烯氮化碳薄膜的结构和键合状态","authors":"Tomoyuki Kamata, O. Niwa, S. Umemura, S. Hirono","doi":"10.1143/JJAP.51.125602","DOIUrl":null,"url":null,"abstract":"We studied pure carbon films and carbon nitride (CN) films by using electron cyclotron resonance (ECR) sputtering. The main feature of this method is high density ion irradiation during deposition, which enables the pure carbon films to have fullerene-like (FL) structures without nitrogen incorporation. Furthermore, without substrate heating, the ECR sputtered CN films exhibited an enhanced FL microstructure and hardness comparable to that of diamond at intermediate nitrogen concentration. This microstructure consisted of bent and cross-linked graphene sheets where layered areas remarkably decreased due to increased sp3 bonding. Under high nitrogen concentration conditions, the CN films demonstrated extremely low hardness because nitrile bonding not only decreased the covalent-bonded two-dimensional hexagonal network but also annihilated the bonding there. By evaluating lattice images obtained by transmission electron microscopy and the bonding state measured by X-ray photoelectron spectroscopy, we classified the ECR sputtered CN films and offered phase diagram and structure zone diagram.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"51 1","pages":"125602"},"PeriodicalIF":1.8000,"publicationDate":"2012-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1143/JJAP.51.125602","citationCount":"6","resultStr":"{\"title\":\"The Structure and Bonding State for Fullerene-Like Carbon Nitride Films with High Hardness Formed by Electron Cyclotron Resonance Plasma Sputtering\",\"authors\":\"Tomoyuki Kamata, O. Niwa, S. Umemura, S. Hirono\",\"doi\":\"10.1143/JJAP.51.125602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We studied pure carbon films and carbon nitride (CN) films by using electron cyclotron resonance (ECR) sputtering. The main feature of this method is high density ion irradiation during deposition, which enables the pure carbon films to have fullerene-like (FL) structures without nitrogen incorporation. Furthermore, without substrate heating, the ECR sputtered CN films exhibited an enhanced FL microstructure and hardness comparable to that of diamond at intermediate nitrogen concentration. This microstructure consisted of bent and cross-linked graphene sheets where layered areas remarkably decreased due to increased sp3 bonding. Under high nitrogen concentration conditions, the CN films demonstrated extremely low hardness because nitrile bonding not only decreased the covalent-bonded two-dimensional hexagonal network but also annihilated the bonding there. By evaluating lattice images obtained by transmission electron microscopy and the bonding state measured by X-ray photoelectron spectroscopy, we classified the ECR sputtered CN films and offered phase diagram and structure zone diagram.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":\"51 1\",\"pages\":\"125602\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2012-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1143/JJAP.51.125602\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1143/JJAP.51.125602\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1143/JJAP.51.125602","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
The Structure and Bonding State for Fullerene-Like Carbon Nitride Films with High Hardness Formed by Electron Cyclotron Resonance Plasma Sputtering
We studied pure carbon films and carbon nitride (CN) films by using electron cyclotron resonance (ECR) sputtering. The main feature of this method is high density ion irradiation during deposition, which enables the pure carbon films to have fullerene-like (FL) structures without nitrogen incorporation. Furthermore, without substrate heating, the ECR sputtered CN films exhibited an enhanced FL microstructure and hardness comparable to that of diamond at intermediate nitrogen concentration. This microstructure consisted of bent and cross-linked graphene sheets where layered areas remarkably decreased due to increased sp3 bonding. Under high nitrogen concentration conditions, the CN films demonstrated extremely low hardness because nitrile bonding not only decreased the covalent-bonded two-dimensional hexagonal network but also annihilated the bonding there. By evaluating lattice images obtained by transmission electron microscopy and the bonding state measured by X-ray photoelectron spectroscopy, we classified the ECR sputtered CN films and offered phase diagram and structure zone diagram.
期刊介绍:
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS