一种与RFID MIMO读卡器技术兼容的亚阈值微波RFID标签芯片

IF 2.3 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sanaz Haddadian;J. Christoph Scheytt;Gerd vom Bögel;Thorben Grenter
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引用次数: 0

摘要

我们提出了一种完全集成的射频识别转发器芯片,工作频率为5.8 GHz,与电子产品代码协议(EPC-C1 G2)的1类生成2兼容。标签芯片包括模拟前端和数字基带处理器,设计在亚阈值状态(0.5V)下,总供电电流小于50美元。作为功率清除单元,在商用65nm CMOS工艺中,用标准阈值电压(SVT)MOS元件设计和制造了单级差分驱动整流器结构,以提供0.8V的整流电压。对制造的单级结构进行的测量显示,22$\text{k}\Omega$负载的最大功率转换效率为69.6%,灵敏度为-12.5dBm,对应于超过1m的读取范围。在该范围内的功率转换效率约为64%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Sub-Threshold Microwave RFID Tag Chip, Compatible With RFID MIMO Reader Technology
We present a fully integrated radio frequency identifications transponder chip operating at 5.8 GHz, which is compatible with the class-1 generation-2 of the Electronic Product Code protocol (EPC-C1 G2). The tag chip including the analog front-end and the digital baseband processor, are designed in the sub-threshold regime (0.5 V) with a total supply current of less than $50~\mu \text{A}$ . As a power scavenging unit, a single-stage differential-drive rectifier structure is designed and fabricated with standard threshold voltage (SVT) MOS elements in a commercial 65-nm CMOS process, to provide 0.8 V of rectified voltage. Measurements performed on the fabricated single-stage structure show a maximum power conversion efficiency of 69.6% for a 22 $\text{k}\Omega $ load and a sensitivity of −12.5 dBm, which corresponds to more than 1 m of reading range. The power conversion efficiency at this range is about 64%.
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CiteScore
5.70
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