可靠的p型有机渗透基极晶体管——集成电路中缺少的元件

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Juan Wang, A. Bonil, Jörn Vahland, H. Kleemann
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引用次数: 0

摘要

由于其纳米级通道长度,垂直有机晶体管正在获得科学的兴趣,以克服横向有机晶体管的频率限制。特别是具有类似于真空管三极管结构的垂直有机渗透基极晶体管(opbt),由于其优异的电学性能而脱颖而出。近年来,n型opbt在高频逻辑电路、显示驱动电路和发光器件等方面的应用已被证明具有优异的性能和巨大的潜力。然而,实现足够的p型opbt以赶上n型器件的性能仍然具有挑战性。在这里,我们报告了一个奇特的发现,即在制造过程中将p型opbt长时间暴露于环境空气中对电性能有积极影响,并极大地将器件的良率提高到100%。在将新鲜装置暴露于空气中时,氧气扩散到与基电极相互作用的半导体层中,这有助于在基上形成针孔并在基周围形成绝缘层。此外,由于氧作为p掺杂剂作用于本工作中使用的p型半导体,器件性能进一步提高,表现为增加的导通电流。然而,随着暴露时间的增加,不同的p型有机半导体根据其电离势表现出不同的行为。通过比较电离电位相差为0.4 eV的两种半导体材料,我们发现可以有效地抑制长期降解。因此,可以利用空气暴露的积极影响来优化p型opbt,这为构建高性能p型opbt以及可能的互补电路提供了一种简单而通用的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliable p-type organic permeable base transistors—the missing component for integrated circuits
Due to their nm-range channel length, vertical organic transistors are gaining scientific interest to overcome the frequency limitations of lateral organic transistor. Especially, vertical organic permeable base transistors (OPBTs) with a structure resembling a vacuum-tube-triode stand out due to their excellent electrical performance. Recently, n-type OPBTs have been demonstrated with excellent performance and great potential to be applied in high-frequency logic circuits, display driving circuits, and light-emitting devices. However, achieving adequate p-type OPBTs to catch up with the performance of n-type devices is still challenging. Here, we report on the peculiar finding that the extended exposure of p-type OPBTs to ambient air during the fabrication has a positive effect on the electrical performance and tremendously improves the yield of devices to 100% . Upon exposing the fresh device to air, oxygen diffuses into the semiconductor layer interacting with the base electrode, which facilitates the formation of pinholes in the base and creates an insulator layer around the base. Moreover, as oxygen acts as a p-dopants to the p-type semiconductors used in this work, the device performance is further improved, manifesting in an increased on-state current. However, as the exposure time increases, different p-type organic semiconductors show different behavior depending on their ionization potential. Comparing two semiconductor materials with a difference in their ionization potential of 0.4 eV, we show that long-term degradation could be effectively suppressed. Therefore, the positive effect of air exposure could be utilized to optimize p-type OPBTs, which offers a simple and universal way to construct high performance p-type OPBTs and possibly also complementary circuits.
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来源期刊
Nano Futures
Nano Futures Chemistry-General Chemistry
CiteScore
4.30
自引率
0.00%
发文量
35
期刊介绍: Nano Futures mission is to reflect the diverse and multidisciplinary field of nanoscience and nanotechnology that now brings together researchers from across physics, chemistry, biomedicine, materials science, engineering and industry.
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