Taegon Oh, Seungjun Lee, Hyerim Kim, Tae Yun Ko, Seon Joon Kim, Chong Min Koo
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The reaction temperature can be increased up to 100 °C to accelerate the etching and delamination of Ti<sub>3</sub>AlC<sub>2</sub> MAX crystals; in addition, the destructive side reaction of the produced Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> MXene is suppressed in the etchant. Consequently, the etching reaction is completed in 4 h at 100 °C and produces high-quality monolayer Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> with an electrical conductivity of 8200 S cm<sup>−1</sup> and yield of over 70%. The Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> MXene fabricated via this modified synthesis exhibits different surface structures and properties arising from more F-terminations than those of Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> synthesized in aqueous HF<sub>2</sub>T. 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引用次数: 7
摘要
二维过渡金属碳化物或氮化物(MXenes)由于其物理化学性质引起了材料科学家和工程师的广泛关注。目前,MXenes是用水溶液HF从max相前体合成的。为了提高MXenes的产量,本文提出了一种无水蚀刻溶液,该溶液由高沸点的二甲亚砜为溶剂,NH4HF2为蚀刻剂,CH3SO3H为酸,NH4PF6为插剂组成。反应温度可提高到100℃,加速了Ti3AlC2 MAX晶体的刻蚀和分层;此外,所制备的Ti3C2Tx MXene的破坏性副反应在蚀刻剂中被抑制。因此,在100°C下,蚀刻反应在4小时内完成,并产生高质量的单层Ti3C2Tx,电导率为8200 S cm−1,收率超过70%。通过该方法制备的Ti3C2Tx MXene具有不同的表面结构和性能,这是因为在水溶液中合成的Ti3C2Tx具有更多的f端。Ti3C2Tx MXene的非典型表面结构使其具有极高的抗拉强度(167±8 MPa),是在HF水溶液中合成的Ti3C2Tx MXene(31.7±7.8 MPa)的5倍。
Fast and High-Yield Anhydrous Synthesis of Ti3C2Tx MXene with High Electrical Conductivity and Exceptional Mechanical Strength
2D transition metal carbides or nitrides (MXenes) have attracted considerable attention from materials scientists and engineers owing to their physicochemical properties. Currently, MXenes are synthesized from MAX-phase precursors using aqueous HF. Here, in order to enhance the production of MXenes, an anhydrous etching solution is proposed, consisting of dimethylsulfoxide as solvent with its high boiling point, NH4HF2 as an etchant, CH3SO3H as an acid, and NH4PF6 as an intercalant. The reaction temperature can be increased up to 100 °C to accelerate the etching and delamination of Ti3AlC2 MAX crystals; in addition, the destructive side reaction of the produced Ti3C2Tx MXene is suppressed in the etchant. Consequently, the etching reaction is completed in 4 h at 100 °C and produces high-quality monolayer Ti3C2Tx with an electrical conductivity of 8200 S cm−1 and yield of over 70%. The Ti3C2Tx MXene fabricated via this modified synthesis exhibits different surface structures and properties arising from more F-terminations than those of Ti3C2Tx synthesized in aqueous HF2T. The atypical surface structure of Ti3C2Tx MXene results in an exceptionally high ultimate tensile strength (167 ± 8 MPa), which is five times larger than those of Ti3C2Tx MXenes synthesized in aqueous HF solution (31.7 ± 7.8 MPa).
期刊介绍:
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