用于毫米波无线通信的可重构低压六方氮化硼非易失性开关

IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Sung Jin Yang, Mor Mordechai Dahan, Or Levit, Frank Makal, Paul Peterson, Jason Alikpala, SS Teja Nibhanupudi, Christopher J. Luth, Sanjay K. Banerjee, Myungsoo Kim, Andreas Roessler, Eilam Yalon and Deji Akinwande*, 
{"title":"用于毫米波无线通信的可重构低压六方氮化硼非易失性开关","authors":"Sung Jin Yang,&nbsp;Mor Mordechai Dahan,&nbsp;Or Levit,&nbsp;Frank Makal,&nbsp;Paul Peterson,&nbsp;Jason Alikpala,&nbsp;SS Teja Nibhanupudi,&nbsp;Christopher J. Luth,&nbsp;Sanjay K. Banerjee,&nbsp;Myungsoo Kim,&nbsp;Andreas Roessler,&nbsp;Eilam Yalon and Deji Akinwande*,&nbsp;","doi":"10.1021/acs.nanolett.2c03565","DOIUrl":null,"url":null,"abstract":"<p >Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 10<sup>11</sup> and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the <i>D</i>-band spectrum (110 to 170 GHz). Furthermore, the <i>S</i><sub>21</sub> insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"23 4","pages":"1152–1158"},"PeriodicalIF":9.1000,"publicationDate":"2023-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications\",\"authors\":\"Sung Jin Yang,&nbsp;Mor Mordechai Dahan,&nbsp;Or Levit,&nbsp;Frank Makal,&nbsp;Paul Peterson,&nbsp;Jason Alikpala,&nbsp;SS Teja Nibhanupudi,&nbsp;Christopher J. Luth,&nbsp;Sanjay K. Banerjee,&nbsp;Myungsoo Kim,&nbsp;Andreas Roessler,&nbsp;Eilam Yalon and Deji Akinwande*,&nbsp;\",\"doi\":\"10.1021/acs.nanolett.2c03565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 10<sup>11</sup> and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the <i>D</i>-band spectrum (110 to 170 GHz). Furthermore, the <i>S</i><sub>21</sub> insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.</p>\",\"PeriodicalId\":53,\"journal\":{\"name\":\"Nano Letters\",\"volume\":\"23 4\",\"pages\":\"1152–1158\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2023-01-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.nanolett.2c03565\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.nanolett.2c03565","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 3

摘要

近年来,非易失性电阻开关记忆效应在二维(2D)过渡金属二硫族化合物和氮化硼中得到了积极的研究,以推进未来记忆和神经形态计算的应用。在这里,我们报告了使用六方氮化硼(h-BN)忆阻器的射频(RF)开关,该开关可在毫米波(mmWave)范围内工作。值得注意的是,h-BN的银(Ag)电极具有出色的非易失性双极电阻开关特性,具有1011的高开/关开关比和低于0.34 V的低开关电压。此外,该开关在d频段频谱(110至170 GHz)上具有0.50 dB的低插入损耗和23 dB的高隔离。此外,S21的插入损耗可以通过5个数量级的电流顺应性来调节,这增加了原子开关的应用前景。这些结果可以使交换机成为未来可重构无线和6G通信系统的关键组件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 1011 and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the D-band spectrum (110 to 170 GHz). Furthermore, the S21 insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.

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来源期刊
Nano Letters
Nano Letters 工程技术-材料科学:综合
CiteScore
16.80
自引率
2.80%
发文量
1182
审稿时长
1.4 months
期刊介绍: Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.
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