Sung Jin Yang, Mor Mordechai Dahan, Or Levit, Frank Makal, Paul Peterson, Jason Alikpala, SS Teja Nibhanupudi, Christopher J. Luth, Sanjay K. Banerjee, Myungsoo Kim, Andreas Roessler, Eilam Yalon and Deji Akinwande*,
{"title":"用于毫米波无线通信的可重构低压六方氮化硼非易失性开关","authors":"Sung Jin Yang, Mor Mordechai Dahan, Or Levit, Frank Makal, Paul Peterson, Jason Alikpala, SS Teja Nibhanupudi, Christopher J. Luth, Sanjay K. Banerjee, Myungsoo Kim, Andreas Roessler, Eilam Yalon and Deji Akinwande*, ","doi":"10.1021/acs.nanolett.2c03565","DOIUrl":null,"url":null,"abstract":"<p >Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 10<sup>11</sup> and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the <i>D</i>-band spectrum (110 to 170 GHz). Furthermore, the <i>S</i><sub>21</sub> insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"23 4","pages":"1152–1158"},"PeriodicalIF":9.1000,"publicationDate":"2023-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications\",\"authors\":\"Sung Jin Yang, Mor Mordechai Dahan, Or Levit, Frank Makal, Paul Peterson, Jason Alikpala, SS Teja Nibhanupudi, Christopher J. Luth, Sanjay K. Banerjee, Myungsoo Kim, Andreas Roessler, Eilam Yalon and Deji Akinwande*, \",\"doi\":\"10.1021/acs.nanolett.2c03565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 10<sup>11</sup> and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the <i>D</i>-band spectrum (110 to 170 GHz). Furthermore, the <i>S</i><sub>21</sub> insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.</p>\",\"PeriodicalId\":53,\"journal\":{\"name\":\"Nano Letters\",\"volume\":\"23 4\",\"pages\":\"1152–1158\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2023-01-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.nanolett.2c03565\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.nanolett.2c03565","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 1011 and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the D-band spectrum (110 to 170 GHz). Furthermore, the S21 insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
- Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale
- Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies
- Modeling and simulation of synthetic, assembly, and interaction processes
- Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance
- Applications of nanoscale materials in living and environmental systems
Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.