{"title":"用限制直流偏压对硅进行高速反应离子刻蚀","authors":"A. Nagy","doi":"10.1016/0026-2714(84)90434-7","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":21779,"journal":{"name":"Solid State Technology","volume":"26 1","pages":"173-178"},"PeriodicalIF":0.0000,"publicationDate":"1983-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0026-2714(84)90434-7","citationCount":"0","resultStr":"{\"title\":\"High-speed reactive ion etching of silicon by the application of a confined DC bias\",\"authors\":\"A. Nagy\",\"doi\":\"10.1016/0026-2714(84)90434-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":21779,\"journal\":{\"name\":\"Solid State Technology\",\"volume\":\"26 1\",\"pages\":\"173-178\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1983-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0026-2714(84)90434-7\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1016/0026-2714(84)90434-7\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Materials Science\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/0026-2714(84)90434-7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Materials Science","Score":null,"Total":0}