{"title":"用三氨基酸钇制备Y2O3薄膜的金属有机气相沉积","authors":"Sarah Karle, Van-Son Dang, Marina Prenzel, Detlef Rogalla, Hans-Werner Becker, Anjana Devi","doi":"10.1002/cvde.201507189","DOIUrl":null,"url":null,"abstract":"<div>\n \n <section>\n \n <p>Thin films of Y<sub>2</sub>O<sub>3</sub> are deposited on Si(100) and Al<sub>2</sub>O<sub>3</sub> (0001) substrates via metal-organic (MO)CVD for the first time using two closely related yttrium <i>tris</i>-amidinate compounds as precursors in the presence of oxygen in the temperature range 400–700 °C. The structural, morphological, and compositional features of the films are investigated in detail. At deposition temperatures of 500 °C and higher both the precursors yield polycrystalline Y<sub>2</sub>O<sub>3</sub> thin films in the cubic phase. The compositional analysis revealed the formation of nearly stoichiometric Y<sub>2</sub>O<sub>3</sub>. The optical band gaps are estimated using UV-Vis spectroscopy. Preliminary electrical measurements are performed in the form of a metal oxide semiconductor (MOS) structure of Al/Y<sub>2</sub>O<sub>3</sub>/p-Si/Ag. Leakage currents and dielectric constants are also determined.</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"335-342"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507189","citationCount":"7","resultStr":"{\"title\":\"Metal-organic CVD of Y2O3 Thin Films using Yttrium tris-amidinates†\",\"authors\":\"Sarah Karle, Van-Son Dang, Marina Prenzel, Detlef Rogalla, Hans-Werner Becker, Anjana Devi\",\"doi\":\"10.1002/cvde.201507189\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <section>\\n \\n <p>Thin films of Y<sub>2</sub>O<sub>3</sub> are deposited on Si(100) and Al<sub>2</sub>O<sub>3</sub> (0001) substrates via metal-organic (MO)CVD for the first time using two closely related yttrium <i>tris</i>-amidinate compounds as precursors in the presence of oxygen in the temperature range 400–700 °C. The structural, morphological, and compositional features of the films are investigated in detail. At deposition temperatures of 500 °C and higher both the precursors yield polycrystalline Y<sub>2</sub>O<sub>3</sub> thin films in the cubic phase. The compositional analysis revealed the formation of nearly stoichiometric Y<sub>2</sub>O<sub>3</sub>. The optical band gaps are estimated using UV-Vis spectroscopy. Preliminary electrical measurements are performed in the form of a metal oxide semiconductor (MOS) structure of Al/Y<sub>2</sub>O<sub>3</sub>/p-Si/Ag. Leakage currents and dielectric constants are also determined.</p>\\n </section>\\n </div>\",\"PeriodicalId\":10093,\"journal\":{\"name\":\"Chemical Vapor Deposition\",\"volume\":\"21 10-11-12\",\"pages\":\"335-342\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1002/cvde.201507189\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Vapor Deposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201507189\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201507189","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Metal-organic CVD of Y2O3 Thin Films using Yttrium tris-amidinates†
Thin films of Y2O3 are deposited on Si(100) and Al2O3 (0001) substrates via metal-organic (MO)CVD for the first time using two closely related yttrium tris-amidinate compounds as precursors in the presence of oxygen in the temperature range 400–700 °C. The structural, morphological, and compositional features of the films are investigated in detail. At deposition temperatures of 500 °C and higher both the precursors yield polycrystalline Y2O3 thin films in the cubic phase. The compositional analysis revealed the formation of nearly stoichiometric Y2O3. The optical band gaps are estimated using UV-Vis spectroscopy. Preliminary electrical measurements are performed in the form of a metal oxide semiconductor (MOS) structure of Al/Y2O3/p-Si/Ag. Leakage currents and dielectric constants are also determined.
期刊介绍：
Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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