二硫化钼基二维材料的CVD生长

H. F. Liu, S. L. Wong, D. Z. Chi
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引用次数: 143

摘要

石墨烯在Ni和Cu等金属表面生长的“自我限制”特性使CVD成为生长大面积连续石墨烯薄膜的自然选择。除了石墨烯之外,由于缺乏自限制特性,因此很难通过CVD获得大面积、高质量的二维(2D)晶体。综述了近年来化学气相沉积法生长mos2基原子层的结构、光学和电学性质的研究,认为热气相沉积法在制备所需材料方面优于热气相硫化法。气体源是否会取代目前在直接沉积方法中占主导地位的固体源是一个悬而未决的问题。讨论和比较了用于二硫化钼生长的各种CVD技术及其产物的最新进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

CVD Growth of MoS2-based Two-dimensional Materials

CVD Growth of MoS2-based Two-dimensional Materials

The ‘self-limiting’ character of graphene growth on the surface of metals such as Ni and Cu makes CVD the natural choice for growing large-area and continuous graphene films. Beyond graphene, absence of the self-limiting property results in a challenge to achieving large-area, high-quality two-dimensional (2D) crystals by CVD. Recent studies of structural, optical, and electrical properties of MoS2-based atomic layers grown by CVD are reviewed, concluding that thermal vapor deposition will outperform thermal vapor sulfurization in producing the required materials. Whether gaseous sources will replace the now dominant solid sources in direct deposition methods is an open issue. The latest progression in various CVD techniques used in MoS2 growth and their resultant products are discussed and compared.

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来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
自引率
0.00%
发文量
0
审稿时长
>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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