PEN衬底上低温原子层沉积Al2O3薄膜的表征

Chemical Vapor Deposition Pub Date : 2014-02-21 DOI:10.1002/cvde.201307082

Kyung-Hyun Choi, Kamran Ali, Chang Young Kim, Nauman Malik Muhammad

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引用次数: 10

摘要

在低至35℃的温度下，通过原子层沉积(ALD)在聚萘二甲酸乙二醇酯(PEN)衬底上沉积了高质量的Al2O3薄膜。本研究以三甲基铝[TMA, Al(CH3)3]和水为前驱体。在35℃下，膜的平均算术粗糙度(Ra)为0.86 nm，每周期的生长速率为1.14 Å。x射线光电子能谱(XPS)分析证实了生长膜的高纯度，无碳污染。该薄膜具有良好的绝缘性能，在可见光区透射率可达90%以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Characterization of Al2O3 Thin Films Fabricated at Low Temperature via Atomic Layer Deposition on PEN Substrates†

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Characterization of Al2O3 Thin Films Fabricated at Low Temperature via Atomic Layer Deposition on PEN Substrates†

Good quality Al₂O₃ thin films are deposited on polyethylene naphthalate (PEN) substrates through atomic layer deposition (ALD) at temperatures as low as 35 °C. Trimethylaluminum [TMA, Al(CH₃)₃] and water are used as precursors in the present study. Growth rates of 1.14 Å per cycle are observed at 35 °C, while the average arithmetic roughness (Ra) of the film is 0.86 nm. X-ray photoelectron spectroscopy (XPS) analysis confirms the high purity of the grown films with no carbon contamination. Good insulating properties are observed for the films and optical transmittance of more than 90% is recorded in the visible region.

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.