复合TiO2/SnO2薄膜的组合常压CVD研究

Sanjayan Sathasivam, Andreas Kafizas, Sapna Ponja, Nicholas Chadwick, Davinder S. Bhachu, Salem M. Bawaked, Abdullah Y. Obaid, Shaeel Al-Thabaiti, Sulaiman N. Basahel, Claire J. Carmalt, Ivan P. Parkin
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引用次数: 13

摘要

采用组合常压(cAP)气相沉积法沉积了一层由TiO2为主到TiO2/SnO2为主再到SnO2为主的梯度组成的薄膜。这是第一次对TiO2/SnO2体系进行cAPCVD研究。薄膜使用一系列技术进行表征,如x射线衍射(XRD),波长色散x射线(WDX)光谱,x射线光电子能谱(XPS),扫描电子显微镜(SEM)和紫外可见(UV-vis)光谱。研究发现,在薄膜上的不同位置,存在着TiO2和SnO2的亲密成分。通过在365 nm波长照射下降解基于reazurin的“智能墨水”来检测光催化活性。仅通过数字成像就可以监测染料浓度的变化。结果表明,富tio2区域具有光催化活性,每个吸收光子产生的最大形式量子产率为3.32 × 10−4个分子。薄片电阻是用四点探头通过范德堡法测定的。在薄膜中富含SnO2和较厚的区域,电导率最高,然而在一些亲密的复合区域,TiO2/SnO2同时具有电导率和光催化活性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Combinatorial Atmospheric Pressure CVD of a Composite TiO2/SnO2 Thin Film†

Combinatorial Atmospheric Pressure CVD of a Composite TiO2/SnO2 Thin Film†

Combinatorial atmospheric pressure (cAP)CVD is used to deposit a film of graded composition from mainly TiO2 to TiO2/SnO2 to mainly SnO2. This is the first cAPCVD study of a TiO2/SnO2 system. The thin film is characterized using a range of techniques such as X-ray diffraction (XRD), wavelength dispersive X-ray (WDX) spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and ultra violet-visible (UV-vis) spectroscopy. It is found that, at various positions on the film, there are intimate compositions of TiO2 and SnO2. The photocatalytic activity is examined via the degradation of a Resazurin-based ‘intelligent ink’ under 365 nm wavelength irradiation. The change in the concentration of the dye can be monitored by digital imaging alone. The results show how TiO2-rich regions are photocatalytically active, producing a maximum formal quantum yield of 3.32 × 10−4 molecules per absorbed photon. The sheet resistance is determined using a four-point probe via the van der Pauw method. The conductivity is highest in the SnO2-rich and thicker regions of the film, however some of the intimate composite regions of TiO2/SnO2 show both conductivity and photocatalytic activity.

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来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
自引率
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0
审稿时长
>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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