{"title":"基于Si/SiC混合开关的三电平有源中性点箝位逆变器的性能评价","authors":"Haichen Liu;Tiefu Zhao;Xuezhi Wu","doi":"10.1109/OJIA.2022.3179225","DOIUrl":null,"url":null,"abstract":"In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost. The proposed Si/SiC HyS-based 3L-ANPC inverters are compared with the full Si IGBT, full SiC MOSFET, and Si with SiC devices-based hybrid 3L-ANPC solutions on the inverter efficiency, power capacity, and device cost. It is shown that compared with the full Si IGBT 3L-ANPC solution, the inverter efficiency improvement by Si/SiC HyS is 2.4% and 1.8% at light load condition and heavy load condition, respectively. Compared to the full SiC MOSFET solution and 2-SiC MOSFET hybrid scheme, the device cost of 2-Si/SiC HyS-based 3L-ANPC is reduced by 78% and 50% with 0.28% and 0.21% maximum inverter efficiency sacrifices. The testing results show that the proposed Si/SiC HyS-based 3L-ANPC inverter is a cost-effective way to realize high inverter efficiency. Between the two proposed Si/SiC HyS-based 3L-ANPC inverters, the 2-Si/SiC HyS-based 3L-ANPC inverter has lower device cost which makes it more suitable for cost-sensitive and high efficiency applications. While the 4-Si/SiC HyS-based 3L-ANPC inverter has higher output power capacity, making it a better candidate for high power density, high power capacity, and high efficiency applications.","PeriodicalId":100629,"journal":{"name":"IEEE Open Journal of Industry Applications","volume":"3 ","pages":"90-103"},"PeriodicalIF":7.9000,"publicationDate":"2022-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782707/9666452/09785900.pdf","citationCount":"8","resultStr":"{\"title\":\"Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter\",\"authors\":\"Haichen Liu;Tiefu Zhao;Xuezhi Wu\",\"doi\":\"10.1109/OJIA.2022.3179225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost. The proposed Si/SiC HyS-based 3L-ANPC inverters are compared with the full Si IGBT, full SiC MOSFET, and Si with SiC devices-based hybrid 3L-ANPC solutions on the inverter efficiency, power capacity, and device cost. It is shown that compared with the full Si IGBT 3L-ANPC solution, the inverter efficiency improvement by Si/SiC HyS is 2.4% and 1.8% at light load condition and heavy load condition, respectively. Compared to the full SiC MOSFET solution and 2-SiC MOSFET hybrid scheme, the device cost of 2-Si/SiC HyS-based 3L-ANPC is reduced by 78% and 50% with 0.28% and 0.21% maximum inverter efficiency sacrifices. The testing results show that the proposed Si/SiC HyS-based 3L-ANPC inverter is a cost-effective way to realize high inverter efficiency. Between the two proposed Si/SiC HyS-based 3L-ANPC inverters, the 2-Si/SiC HyS-based 3L-ANPC inverter has lower device cost which makes it more suitable for cost-sensitive and high efficiency applications. While the 4-Si/SiC HyS-based 3L-ANPC inverter has higher output power capacity, making it a better candidate for high power density, high power capacity, and high efficiency applications.\",\"PeriodicalId\":100629,\"journal\":{\"name\":\"IEEE Open Journal of Industry Applications\",\"volume\":\"3 \",\"pages\":\"90-103\"},\"PeriodicalIF\":7.9000,\"publicationDate\":\"2022-03-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/iel7/8782707/9666452/09785900.pdf\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Open Journal of Industry Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/9785900/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of Industry Applications","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/9785900/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter
In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost. The proposed Si/SiC HyS-based 3L-ANPC inverters are compared with the full Si IGBT, full SiC MOSFET, and Si with SiC devices-based hybrid 3L-ANPC solutions on the inverter efficiency, power capacity, and device cost. It is shown that compared with the full Si IGBT 3L-ANPC solution, the inverter efficiency improvement by Si/SiC HyS is 2.4% and 1.8% at light load condition and heavy load condition, respectively. Compared to the full SiC MOSFET solution and 2-SiC MOSFET hybrid scheme, the device cost of 2-Si/SiC HyS-based 3L-ANPC is reduced by 78% and 50% with 0.28% and 0.21% maximum inverter efficiency sacrifices. The testing results show that the proposed Si/SiC HyS-based 3L-ANPC inverter is a cost-effective way to realize high inverter efficiency. Between the two proposed Si/SiC HyS-based 3L-ANPC inverters, the 2-Si/SiC HyS-based 3L-ANPC inverter has lower device cost which makes it more suitable for cost-sensitive and high efficiency applications. While the 4-Si/SiC HyS-based 3L-ANPC inverter has higher output power capacity, making it a better candidate for high power density, high power capacity, and high efficiency applications.