氮掺杂对非晶态SnSiO薄膜晶体管性能的影响

Q Engineering

Journal of Display Technology Pub Date : 2016-09-28 DOI:10.1109/JDT.2016.2614328

Jianwen Yang;Yanbing Han;Ruofan Fu;Qun Zhang

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引用次数: 8

摘要

通过比较不同氧流量的锡硅氧化物薄膜晶体管，研究了溅射过程中氮流量对其性能的影响。增加氮气流速和氧气流速可以降低载流子浓度并将导通电压向正方向偏移，表明氮气可以是TSO沟道层的良好载流子抑制器。氧空位可以用氮原子填充，从而产生较少的电子供体。相应地，由于渗流传导模型，迁移率降低。此外，无论氮流量如何，TSO沟道层都是非晶的，这对于确保氧化物TFT的均匀性很重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of Nitrogen Doping on Performance of Amorphous SnSiO Thin Film Transistor

We investigated the effect of nitrogen flow rate during the sputtering on the performances of tin silicon oxide (TSO) thin film transistors (TFTs) through comparing to the TFTs with different oxygen flow rates. Increasing nitrogen flow rate as well as oxygen flow rate can reduce the carrier concentration and shift turn on voltage to the positive direction, indicating that nitrogen can be a good carrier suppressor of the TSO channel layer. The oxygen vacancies can be filled with nitrogen atoms resulting in less electron donors. Correspondingly, the mobility decreases due to the percolation conduction model. Besides, the TSO channel layer is amorphous regardless of nitrogen flow rate, which is important to ensure uniformity of oxide TFTs.

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来源期刊

Journal of Display Technology 工程技术-工程：电子与电气

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2.8 months

期刊介绍： This publication covers the theory, material, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, design and simulation, materials, electronics, physics, and reliability aspects of displays and the application of displays. The Journal is sponsored by EDS, seven other IEEE societies (BT, CES, CPMT, IA, IM, PHO and SSC) and the Optical Society of America (OSA).