量子阱结构对混合主发射中间层绿色磷光OLED的影响

Q Engineering

Journal of Display Technology Pub Date : 2016-09-30 DOI:10.1109/JDT.2016.2614688

ZhiQi Kou;Yao Xu;Shuang Cheng;XiaoPing Wang

{"title":"量子阱结构对混合主发射中间层绿色磷光OLED的影响","authors":"ZhiQi Kou;Yao Xu;Shuang Cheng;XiaoPing Wang","doi":"10.1109/JDT.2016.2614688","DOIUrl":null,"url":null,"abstract":"In order to improve the performance of green phosphorescent organic light-emitting diodes, we investigate multiple quantum well (MQW) structure (CBP/CBP\n2/3\n:TPBi\n1/3\n/CBP) devices with mixed host emission interlayer (CBP\n2/3\n:TPBi\n1/3\n). The four devices with the same thickness of the emission layer (EML) are fabricated, in which the number of quantum well is zero, one, two, and three, respectively. Remarkably, the device with a double MQW structure achieves the maximum luminance, current efficiency and power efficiency values corresponding to 21930 cd/m\n2\n at 10 V, 48.6 cd/A, and 46.4 lm/W, respectively. The results also show that the double MQW structure can reduce turn-on voltage from 3.5 to 3 V. We attribute these improvements to the MQW structure which can extend the exciton distribution and avoid space charge accumulation in the EML.","PeriodicalId":15588,"journal":{"name":"Journal of Display Technology","volume":"12 12","pages":"1668-1671"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/JDT.2016.2614688","citationCount":"4","resultStr":"{\"title\":\"The Effect of the Quantum Well Structure in Green Phosphorescent OLED With a Mixed Host Emission Interlayer\",\"authors\":\"ZhiQi Kou;Yao Xu;Shuang Cheng;XiaoPing Wang\",\"doi\":\"10.1109/JDT.2016.2614688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to improve the performance of green phosphorescent organic light-emitting diodes, we investigate multiple quantum well (MQW) structure (CBP/CBP\\n2/3\\n:TPBi\\n1/3\\n/CBP) devices with mixed host emission interlayer (CBP\\n2/3\\n:TPBi\\n1/3\\n). The four devices with the same thickness of the emission layer (EML) are fabricated, in which the number of quantum well is zero, one, two, and three, respectively. Remarkably, the device with a double MQW structure achieves the maximum luminance, current efficiency and power efficiency values corresponding to 21930 cd/m\\n2\\n at 10 V, 48.6 cd/A, and 46.4 lm/W, respectively. The results also show that the double MQW structure can reduce turn-on voltage from 3.5 to 3 V. We attribute these improvements to the MQW structure which can extend the exciton distribution and avoid space charge accumulation in the EML.\",\"PeriodicalId\":15588,\"journal\":{\"name\":\"Journal of Display Technology\",\"volume\":\"12 12\",\"pages\":\"1668-1671\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1109/JDT.2016.2614688\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Display Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/7580594/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Display Technology","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/7580594/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 4

摘要

为了提高绿色磷光有机发光二极管的性能，我们研究了具有混合主发射夹层（CBP2/3:TPBi1/3）的多量子阱（CBP/CBP2/3:TPBi1/3/CBP）结构器件。制作了四个具有相同发射层厚度的器件，其中量子阱的数量分别为零、一、二和三。值得注意的是，具有双MQW结构的器件在10V、48.6cd/a和46.4lm/W下分别实现了对应于21930cd/m2的最大亮度、电流效率和功率效率值。结果还表明，双MQW结构可以将导通电压从3.5V降低到3V。我们将这些改进归因于MQW结构，它可以扩展激子分布并避免EML中的空间电荷积累。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The Effect of the Quantum Well Structure in Green Phosphorescent OLED With a Mixed Host Emission Interlayer

In order to improve the performance of green phosphorescent organic light-emitting diodes, we investigate multiple quantum well (MQW) structure (CBP/CBP _2/3 :TPBi _1/3 /CBP) devices with mixed host emission interlayer (CBP _2/3 :TPBi _1/3 ). The four devices with the same thickness of the emission layer (EML) are fabricated, in which the number of quantum well is zero, one, two, and three, respectively. Remarkably, the device with a double MQW structure achieves the maximum luminance, current efficiency and power efficiency values corresponding to 21930 cd/m ² at 10 V, 48.6 cd/A, and 46.4 lm/W, respectively. The results also show that the double MQW structure can reduce turn-on voltage from 3.5 to 3 V. We attribute these improvements to the MQW structure which can extend the exciton distribution and avoid space charge accumulation in the EML.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Display Technology 工程技术-工程：电子与电气

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2.8 months

期刊介绍： This publication covers the theory, material, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, design and simulation, materials, electronics, physics, and reliability aspects of displays and the application of displays. The Journal is sponsored by EDS, seven other IEEE societies (BT, CES, CPMT, IA, IM, PHO and SSC) and the Optical Society of America (OSA).