{"title":"反向沟道掺杂改善三维NAND闪存的存储性能","authors":"Deepika Gupta , Abhishek Kumar Upadhyay , Ankur Beohar , Santosh Kumar Vishvakarma","doi":"10.1016/j.memori.2023.100031","DOIUrl":null,"url":null,"abstract":"<div><p>The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper. Specifically, we study the program characteristics, data retention capability junction-free NAND flash memory with half pitch range from 35 nm to 12 nm. Based on our analysis, we highlight that the retrograde channel doping approach can improve not only the SCEs but also the program speed and data control time for 3-D junction-free NAND flash memory, without varying the oxide stack in charge trap-based flash memory.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100031"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping\",\"authors\":\"Deepika Gupta , Abhishek Kumar Upadhyay , Ankur Beohar , Santosh Kumar Vishvakarma\",\"doi\":\"10.1016/j.memori.2023.100031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper. Specifically, we study the program characteristics, data retention capability junction-free NAND flash memory with half pitch range from 35 nm to 12 nm. Based on our analysis, we highlight that the retrograde channel doping approach can improve not only the SCEs but also the program speed and data control time for 3-D junction-free NAND flash memory, without varying the oxide stack in charge trap-based flash memory.</p></div>\",\"PeriodicalId\":100915,\"journal\":{\"name\":\"Memories - Materials, Devices, Circuits and Systems\",\"volume\":\"4 \",\"pages\":\"Article 100031\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Memories - Materials, Devices, Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773064623000087\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Memories - Materials, Devices, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773064623000087","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping
The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper. Specifically, we study the program characteristics, data retention capability junction-free NAND flash memory with half pitch range from 35 nm to 12 nm. Based on our analysis, we highlight that the retrograde channel doping approach can improve not only the SCEs but also the program speed and data control time for 3-D junction-free NAND flash memory, without varying the oxide stack in charge trap-based flash memory.
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