{"title":"通过高效的基于GDI的计数器对基于CNT的8位乘法器进行电压过缩放","authors":"Ayoub Sadeghi, Nabiollah Shiri, Mahmood Rafiee, Abdolreza Darabi, Ebrahim Abiri","doi":"10.1049/cdt2.12049","DOIUrl":null,"url":null,"abstract":"<p>A new low-power and high-speed multiplier is presented based on the voltage over scaling (VOS) technique and new 5:3 and 7:3 counter cells. The VOS reduces power consumption in digital circuits, but different voltage levels of the VOS increase the delay in different stages of a multiplier. Hence, the proposed counters are implemented by the gate-diffusion input technique to solve the speed limitation of the VOS-based circuits. The proposed GDI-based 5:3 and 7:3 counters save power and reduce the area by 2x and 2.5x, respectively. To prevent the threshold voltage (<i>V</i><sub>th</sub>) drop in the suggested GDI-based circuits, carbon nanotube field-effect transistor (CNTFET) technology is used. In the counters, the chirality vector and tubes of the CNTFETs are properly adjusted to attain full-swing outputs with high driving capability. Also, their validation against heat distribution under different time intervals, as a major issue in the CNTFET technology is investigated, and their very low sensitivity is confirmed. The low complexity, high stability and efficient performance of the presented counter cells introduce the proposed VOS-CNTFET-GDI-based multiplier as an alternative to the previous designs.</p>","PeriodicalId":50383,"journal":{"name":"IET Computers and Digital Techniques","volume":"17 1","pages":"1-19"},"PeriodicalIF":1.1000,"publicationDate":"2022-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cdt2.12049","citationCount":"3","resultStr":"{\"title\":\"Voltage over-scaling CNT-based 8-bit multiplier by high-efficient GDI-based counters\",\"authors\":\"Ayoub Sadeghi, Nabiollah Shiri, Mahmood Rafiee, Abdolreza Darabi, Ebrahim Abiri\",\"doi\":\"10.1049/cdt2.12049\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>A new low-power and high-speed multiplier is presented based on the voltage over scaling (VOS) technique and new 5:3 and 7:3 counter cells. The VOS reduces power consumption in digital circuits, but different voltage levels of the VOS increase the delay in different stages of a multiplier. Hence, the proposed counters are implemented by the gate-diffusion input technique to solve the speed limitation of the VOS-based circuits. The proposed GDI-based 5:3 and 7:3 counters save power and reduce the area by 2x and 2.5x, respectively. To prevent the threshold voltage (<i>V</i><sub>th</sub>) drop in the suggested GDI-based circuits, carbon nanotube field-effect transistor (CNTFET) technology is used. In the counters, the chirality vector and tubes of the CNTFETs are properly adjusted to attain full-swing outputs with high driving capability. Also, their validation against heat distribution under different time intervals, as a major issue in the CNTFET technology is investigated, and their very low sensitivity is confirmed. The low complexity, high stability and efficient performance of the presented counter cells introduce the proposed VOS-CNTFET-GDI-based multiplier as an alternative to the previous designs.</p>\",\"PeriodicalId\":50383,\"journal\":{\"name\":\"IET Computers and Digital Techniques\",\"volume\":\"17 1\",\"pages\":\"1-19\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2022-11-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cdt2.12049\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IET Computers and Digital Techniques\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1049/cdt2.12049\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Computers and Digital Techniques","FirstCategoryId":"94","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/cdt2.12049","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
Voltage over-scaling CNT-based 8-bit multiplier by high-efficient GDI-based counters
A new low-power and high-speed multiplier is presented based on the voltage over scaling (VOS) technique and new 5:3 and 7:3 counter cells. The VOS reduces power consumption in digital circuits, but different voltage levels of the VOS increase the delay in different stages of a multiplier. Hence, the proposed counters are implemented by the gate-diffusion input technique to solve the speed limitation of the VOS-based circuits. The proposed GDI-based 5:3 and 7:3 counters save power and reduce the area by 2x and 2.5x, respectively. To prevent the threshold voltage (Vth) drop in the suggested GDI-based circuits, carbon nanotube field-effect transistor (CNTFET) technology is used. In the counters, the chirality vector and tubes of the CNTFETs are properly adjusted to attain full-swing outputs with high driving capability. Also, their validation against heat distribution under different time intervals, as a major issue in the CNTFET technology is investigated, and their very low sensitivity is confirmed. The low complexity, high stability and efficient performance of the presented counter cells introduce the proposed VOS-CNTFET-GDI-based multiplier as an alternative to the previous designs.
期刊介绍：
IET Computers & Digital Techniques publishes technical papers describing recent research and development work in all aspects of digital system-on-chip design and test of electronic and embedded systems, including the development of design automation tools (methodologies, algorithms and architectures). Papers based on the problems associated with the scaling down of CMOS technology are particularly welcome. It is aimed at researchers, engineers and educators in the fields of computer and digital systems design and test.
The key subject areas of interest are:
Design Methods and Tools: CAD/EDA tools, hardware description languages, high-level and architectural synthesis, hardware/software co-design, platform-based design, 3D stacking and circuit design, system on-chip architectures and IP cores, embedded systems, logic synthesis, low-power design and power optimisation.
Simulation, Test and Validation: electrical and timing simulation, simulation based verification, hardware/software co-simulation and validation, mixed-domain technology modelling and simulation, post-silicon validation, power analysis and estimation, interconnect modelling and signal integrity analysis, hardware trust and security, design-for-testability, embedded core testing, system-on-chip testing, on-line testing, automatic test generation and delay testing, low-power testing, reliability, fault modelling and fault tolerance.
Processor and System Architectures: many-core systems, general-purpose and application specific processors, computational arithmetic for DSP applications, arithmetic and logic units, cache memories, memory management, co-processors and accelerators, systems and networks on chip, embedded cores, platforms, multiprocessors, distributed systems, communication protocols and low-power issues.
Configurable Computing: embedded cores, FPGAs, rapid prototyping, adaptive computing, evolvable and statically and dynamically reconfigurable and reprogrammable systems, reconfigurable hardware.
Design for variability, power and aging: design methods for variability, power and aging aware design, memories, FPGAs, IP components, 3D stacking, energy harvesting.
Case Studies: emerging applications, applications in industrial designs, and design frameworks.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
