三进制全加器的综合调查:统计、校正和评估

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Sarina Nemati, Mostafa Haghi Kashani, Reza Faghih Mirzaee
{"title":"三进制全加器的综合调查:统计、校正和评估","authors":"Sarina Nemati,&nbsp;Mostafa Haghi Kashani,&nbsp;Reza Faghih Mirzaee","doi":"10.1049/cds2.12152","DOIUrl":null,"url":null,"abstract":"<p>The history of ternary adders goes back to more than 6 decades ago. Since then, a multitude of ternary full adders (TFAs) have been presented in the literature. This article conducts a review of TFAs so that one can be familiar with the utilised design methodologies and their prevalence. Moreover, despite numerous TFAs, almost none of them are in their simplest form. A large number of transistors could have been eliminated by considering a partial TFA instead of a complete one. According to our investigation, only 28.6% of the previous designs are partial TFAs. Also, they could have been simplified even further by assuming a partial TFA with an output carry voltage of 0 V or V<sub>DD</sub>. This way, in a single-V<sub>DD</sub> design, voltage division inside the Carry generator part would have been eliminated and less power dissipated. As far as we have searched, there are only three partial TFAs with this favourable condition in the literature. Additionally, most of the simulation setups in the previous articles are not realistic enough. Therefore, the simulation results reported in these papers are neither comparable nor entirely valid. Therefore, the authors got motivated to conduct a survey, elaborate on this issue, and enhance some of the previous designs. Among 84 papers, 10 different TFAs (from 11 papers) are selected, simplified, and simulated in this article. Simulation results by HSPICE and 32 nm carbon nanotube FET technology reveal that the simplified partial TFAs outperform their original versions in terms of delay, power, and transistor count.</p>","PeriodicalId":50386,"journal":{"name":"Iet Circuits Devices & Systems","volume":null,"pages":null},"PeriodicalIF":1.0000,"publicationDate":"2023-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12152","citationCount":"3","resultStr":"{\"title\":\"Comprehensive survey of ternary full adders: Statistics, corrections, and assessments\",\"authors\":\"Sarina Nemati,&nbsp;Mostafa Haghi Kashani,&nbsp;Reza Faghih Mirzaee\",\"doi\":\"10.1049/cds2.12152\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The history of ternary adders goes back to more than 6 decades ago. Since then, a multitude of ternary full adders (TFAs) have been presented in the literature. This article conducts a review of TFAs so that one can be familiar with the utilised design methodologies and their prevalence. Moreover, despite numerous TFAs, almost none of them are in their simplest form. A large number of transistors could have been eliminated by considering a partial TFA instead of a complete one. According to our investigation, only 28.6% of the previous designs are partial TFAs. Also, they could have been simplified even further by assuming a partial TFA with an output carry voltage of 0 V or V<sub>DD</sub>. This way, in a single-V<sub>DD</sub> design, voltage division inside the Carry generator part would have been eliminated and less power dissipated. As far as we have searched, there are only three partial TFAs with this favourable condition in the literature. Additionally, most of the simulation setups in the previous articles are not realistic enough. Therefore, the simulation results reported in these papers are neither comparable nor entirely valid. Therefore, the authors got motivated to conduct a survey, elaborate on this issue, and enhance some of the previous designs. Among 84 papers, 10 different TFAs (from 11 papers) are selected, simplified, and simulated in this article. Simulation results by HSPICE and 32 nm carbon nanotube FET technology reveal that the simplified partial TFAs outperform their original versions in terms of delay, power, and transistor count.</p>\",\"PeriodicalId\":50386,\"journal\":{\"name\":\"Iet Circuits Devices & Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-02-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1049/cds2.12152\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iet Circuits Devices & Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1049/cds2.12152\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iet Circuits Devices & Systems","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/cds2.12152","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 3

摘要

三元加法器的历史可以追溯到60多年前。从那时起,文献中出现了大量的三元全加器(TFA)。本文对TFA进行了审查,以便人们能够熟悉所使用的设计方法及其普遍性。此外,尽管有许多TFA,但几乎没有一个是最简单的形式。通过考虑部分TFA而不是完整的TFA,可以消除大量晶体管。根据我们的调查,以前的设计中只有28.6%是部分TFA。此外,通过假设输出进位电压为0V或VDD的部分TFA,它们可以被进一步简化。这样,在单个VDD设计中,Carry发电机部件内部的分压将被消除,并且功耗更小。据我们所检索,文献中只有三个部分TFA具有这种有利条件。此外,前几篇文章中的大多数模拟设置都不够逼真。因此,这些论文中报道的模拟结果既不具有可比性,也不完全有效。因此,作者有动机进行调查,详细阐述这个问题,并对以前的一些设计进行改进。在84篇论文中,从11篇论文中选择了10篇不同的TFA,并对其进行了简化和模拟。HSPICE和32nm碳纳米管FET技术的模拟结果表明,简化的部分TFA在延迟、功率和晶体管数量方面优于原始版本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Comprehensive survey of ternary full adders: Statistics, corrections, and assessments

Comprehensive survey of ternary full adders: Statistics, corrections, and assessments

The history of ternary adders goes back to more than 6 decades ago. Since then, a multitude of ternary full adders (TFAs) have been presented in the literature. This article conducts a review of TFAs so that one can be familiar with the utilised design methodologies and their prevalence. Moreover, despite numerous TFAs, almost none of them are in their simplest form. A large number of transistors could have been eliminated by considering a partial TFA instead of a complete one. According to our investigation, only 28.6% of the previous designs are partial TFAs. Also, they could have been simplified even further by assuming a partial TFA with an output carry voltage of 0 V or VDD. This way, in a single-VDD design, voltage division inside the Carry generator part would have been eliminated and less power dissipated. As far as we have searched, there are only three partial TFAs with this favourable condition in the literature. Additionally, most of the simulation setups in the previous articles are not realistic enough. Therefore, the simulation results reported in these papers are neither comparable nor entirely valid. Therefore, the authors got motivated to conduct a survey, elaborate on this issue, and enhance some of the previous designs. Among 84 papers, 10 different TFAs (from 11 papers) are selected, simplified, and simulated in this article. Simulation results by HSPICE and 32 nm carbon nanotube FET technology reveal that the simplified partial TFAs outperform their original versions in terms of delay, power, and transistor count.

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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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