500 V breakdown voltage in β-Ga2O3 laterally diffused metal-oxide-semiconductor field-effect transistor with 108 MW/cm2 power figure of merit

The authors’ present a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) with β-Ga₂O₃ , which is a large bandgap semiconductor (β-LDMOSFET), for increasing breakdown voltage (V_BR) and power figure of merit. The fundamental purpose is to use a β-Ga₂O₃ semiconductor instead of silicon material due to its large breakdown field. The characteristics of β-LDMOSFET are analysed to those of standard LDMOSFET, such as V_BR, ON-resistance (R_ON), power figure of merit (PFOM), and radio frequency (RF) performances. The effects of RF, such as gate-drain capacitance (C_GD), gate-source capacitance (C_GS), transit frequency (f_T), and maximum frequency of oscillation (f_MAX) have been investigated. The β-LDMOSFET structure outperforms performance in the V_BR by increasing it to 500 versus 84.4 V in standard LDMOSFET design. The suggested β-LDMOSFET has R_ON ~ 2.3 mΩ.cm⁻² and increased the PFOM (V_BR²/R_ON) to 108.6 MW/cm². All the simulations are done with TCAD and simulation models are calibrated with the experimental data.