基于Cu0.06-xNi0.03Sn0.03+xS0.12纳米片的光电子和介电应用

D. Sahoo , S. Senapati , S. Samal , Sagar Bisoyi , R. Naik
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引用次数: 2

摘要

本文报道了水热法制备Cu0.06-xNi0.03Sn0.03+xS0.12 (CNTS)纳米片及其介电和光学性能。制备的不同Sn含量的碳纳米管样品呈现出多晶的性质,其中含有原生锡石相和多个次生相。CNTS样品呈纳米花状,由自组装的NS组成,平均厚度为40-50 nm。形貌保持不变,但随着Sn含量的增加,带边吸收和相应的带隙发生了变化。在532 nm激发下,CNTS纳米片的光致发光峰位于橙红色区域。可见光发射主要是由于NS中存在不同的缺陷态。从频率和温度相关的介电研究中,评估了交流电导率和阻抗谱相关参数。在低频区,CNTS表现为非极化材料,而在高频区,由于增加了频率范围,有利于载流子的跳变。导电是由于载流子在势垒势上的跳跃和在高温下由于晶格畸变而形成的极化子隧穿的累积结果。复合阻抗参数的变化证实了电阻温度系数为负,体电阻随温度升高而减小。碳纳米管材料具有可调谐的半导体特性,以及优异的光学和介电性能,促进了其在各种尖端光电和介电器件中的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Facile hydrothermally synthesized nanosheets-based Cu0.06-xNi0.03Sn0.03+xS0.12 flower for optoelectronic and dielectric applications

Facile hydrothermally synthesized nanosheets-based Cu0.06-xNi0.03Sn0.03+xS0.12 flower for optoelectronic and dielectric applications

The present investigation reports the preparation of Cu0.06-xNi0.03Sn0.03+xS0.12 (CNTS) nanosheets (NS) by hydrothermal method and its dielectric and optical behavior. The as-prepared CNTS samples with different Sn content exhibit polycrystalline nature with primary stannite phase along with several secondary phases. The CNTS samples show nanoflower-like morphology consisting of self-assembled NS of an average thickness of 40–50 nm. The morphology remains invariant, but a variation in the band edge absorption and corresponding bandgap variation is observed for the increase in Sn content. The photoluminescence emission with 532 nm excitation of CNTS nanosheets shows the peaks in orange-red regions. The visible emission is primarily due to the presence of different defect states in the NS. From the frequency and temperature-dependent dielectric study, AC conductivity and the impedance spectroscopy-related parameters were evaluated. In the low-frequency region, the CNTS behaves like an unpolarized material, whereas in the high-frequency region, it facilitates the hopping of charge carriers due to the increased frequency range. The electrical conduction is due to the cumulative result of the hopping of charge carriers across the barrier potential and tunneling of polarons formed due to lattice distortion at high temperatures. The behavior of the complex impedance parameters validates the negative temperature coefficient of resistance and the decrease in bulk resistance with the increase in temperature. The tunable semiconducting properties, along with the excellent optical and dielectric behavior of the CNTS materials, promote its application in various cutting-edge optoelectronic and dielectric devices.

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