用共轭聚合物漂浮薄膜制备双稳态电阻式记忆开关

Shubham Sharma , Nikita Kumari , Shuichi Nagamatsu , Masakazu Nakamura , Shyam S. Pandey
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引用次数: 0

摘要

共轭聚合物(CP)薄膜的逐层(LBL)制造同时通过溶液处理保持其微观结构特征是紧凑和柔性电子电路非常需要的。然而,由于对底层不可避免的损坏,这是一种麻烦和挑战。为了解决这个问题,采用单向浮膜转移法(UFTM)在正交液体表面上LBL制备定向CP薄膜。此外,通过将金属纳米结构层夹在LBL制造的定向CP薄膜之间来制造电阻双稳态存储器开关。电阻开关现象是通过利用在真空沉积铝纳米结构的可用状态上施加的依赖于偏压的电荷捕获、保持和复合来实现的。通过对三种噻吩基聚合物RR-P3HT、PBTTT和PTB-7的比较研究,还分析了CP骨架构象对垂直电荷传输的影响。结果表明,具有相对较少疏水侧链的CPs由于其在UFTM中使用的亲水性液体基质上的优选面上构象而更利于容易的垂直电荷传输。结果表明,采用UFTM工艺制备的PTB-7取向薄膜制备的非易失性双稳态电阻存储开关具有1.5×106的高通断比和高耐久性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Bistable Resistive Memory Switches fabricated by Floating Thin Films of Conjugated Polymers

Bistable Resistive Memory Switches fabricated by Floating Thin Films of Conjugated Polymers

The layer-by-layer (LBL) fabrication of conjugated polymer (CPs) thin films while preserving their microstructural features by solution processing is highly desired for compact and flexible electronic circuits. However, it is cumbersome and challenging owing to the unavoidable damage to the underlying layers. To circumvent this issue, the unidirectional floating-film transfer method (UFTM) was utilized for the LBL fabrication of oriented CP thin films on the orthogonal liquid surfaces. Further, resistive bistable memory switches were fabricated by sandwiching a layer of metal nanostructures between the LBL-fabricated oriented CP thin films. The resistive switching phenomena were realized by utilizing the applied bias-dependent charge trapping, holding, and recombination on the available states at vacuum-deposited aluminum nanostructures. The effect of CP backbone conformation on the vertical charge transport was also analyzed via a comparative study of three thiophene-based polymers namely RR-P3HT, PBTTT, and PTB-7. It was revealed that CPs with relatively fewer hydrophobic side chains was more favorable for the facile vertical charge transport due to its preferred face-on conformation on the hydrophilic liquid substrate used in UFTM. It was demonstrated that a non-volatile bistable resistive memory switch fabricated using UFTM-processed oriented thin films of PTB-7 exhibited a remarkably high on-off ratio of 1.5 × 106 with high durability.

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