Raquel Rodriguez-Lamas , Dolors Pla , Caroline Pirovano , Odette Chaix-Pluchery , Carlos Moncasi , Michel Boudard , Rose-Noëlle Vannier , Carmen Jiménez , Mónica Burriel
{"title":"性能优化的非易失性双极TiN/LaMnO3/Pt忆阻器","authors":"Raquel Rodriguez-Lamas , Dolors Pla , Caroline Pirovano , Odette Chaix-Pluchery , Carlos Moncasi , Michel Boudard , Rose-Noëlle Vannier , Carmen Jiménez , Mónica Burriel","doi":"10.1016/j.mtelec.2023.100054","DOIUrl":null,"url":null,"abstract":"<div><p>LaMnO<sub>3+δ</sub> (LMO) perovskite is a very interesting candidate for Valence Change Memories due to its flexible stoichiometry, accommodated through the Mn<sup>+3</sup>/Mn<sup>+4</sup> equilibrium, at the origin of significant resistivity changes. Here, the successful combination of a LMO layer, with a top active TiN electrode and a bottom inert Pt electrode, is presented. The manganite layer is integrated on silicon-based substrates in the form of a polycrystalline film. By comparing the memristive behavior of these TiN/LMO/Pt devices with Au/LMO/Pt devices prepared on the same film, the essential role of the active oxygen electrode is put in evidence. TiN/LMO/Pt memristive devices show optimized performance, operating in both sweep and pulse mode, with the capability of cycling more than a hundred times and showing good retention. Furthermore, a simple phenomenological model describing the memristive behavior of the devices is also presented.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100054"},"PeriodicalIF":0.0000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance\",\"authors\":\"Raquel Rodriguez-Lamas , Dolors Pla , Caroline Pirovano , Odette Chaix-Pluchery , Carlos Moncasi , Michel Boudard , Rose-Noëlle Vannier , Carmen Jiménez , Mónica Burriel\",\"doi\":\"10.1016/j.mtelec.2023.100054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>LaMnO<sub>3+δ</sub> (LMO) perovskite is a very interesting candidate for Valence Change Memories due to its flexible stoichiometry, accommodated through the Mn<sup>+3</sup>/Mn<sup>+4</sup> equilibrium, at the origin of significant resistivity changes. Here, the successful combination of a LMO layer, with a top active TiN electrode and a bottom inert Pt electrode, is presented. The manganite layer is integrated on silicon-based substrates in the form of a polycrystalline film. By comparing the memristive behavior of these TiN/LMO/Pt devices with Au/LMO/Pt devices prepared on the same film, the essential role of the active oxygen electrode is put in evidence. TiN/LMO/Pt memristive devices show optimized performance, operating in both sweep and pulse mode, with the capability of cycling more than a hundred times and showing good retention. Furthermore, a simple phenomenological model describing the memristive behavior of the devices is also presented.</p></div>\",\"PeriodicalId\":100893,\"journal\":{\"name\":\"Materials Today Electronics\",\"volume\":\"5 \",\"pages\":\"Article 100054\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S277294942300030X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Electronics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S277294942300030X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance
LaMnO3+δ (LMO) perovskite is a very interesting candidate for Valence Change Memories due to its flexible stoichiometry, accommodated through the Mn+3/Mn+4 equilibrium, at the origin of significant resistivity changes. Here, the successful combination of a LMO layer, with a top active TiN electrode and a bottom inert Pt electrode, is presented. The manganite layer is integrated on silicon-based substrates in the form of a polycrystalline film. By comparing the memristive behavior of these TiN/LMO/Pt devices with Au/LMO/Pt devices prepared on the same film, the essential role of the active oxygen electrode is put in evidence. TiN/LMO/Pt memristive devices show optimized performance, operating in both sweep and pulse mode, with the capability of cycling more than a hundred times and showing good retention. Furthermore, a simple phenomenological model describing the memristive behavior of the devices is also presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
