电泳法在银衬底上沉积金纳米颗粒薄膜

IF 2.3 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Samira Hosseingholilou, Davoud Dorranian
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引用次数: 0

摘要

实验研究了电泳沉积(EPD)法制备金纳米颗粒(NPs)薄膜的时间和电压对其性能的影响。采用脉冲激光烧蚀法在蒸馏水中合成了金纳米粒子。金纳米粒子悬浮液作为EPD的电解液。采用调q NdYAG激光器基波长1064 nm,脉宽7 ns进行辐照。电泳沉积装置由两块2 × 2 cm的银片作为电极组成。它们被平行浸入金NP悬浮液的7毫米间隙中。在不同的沉积时间和施加电压下制备了5个金NP薄膜样品。结果表明,沉积时间和施加电压对制备的EPD薄膜的粗糙度、厚度和表面质量有很强的控制作用。沉积膜的厚度与沉积电压有关,其粗糙度随沉积时间的增加而增加。此外,沉积膜的反射也受到表面粗糙度的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Electrophoretic deposited gold nanoparticle thin film on silver substrate

Electrophoretic deposited gold nanoparticle thin film on silver substrate

Effects of the deposition time and voltage on the characteristics of gold nanoparticles (NPs) thin films, prepared by the electrophoretic deposition (EPD) method on the silver substrate, were investigated experimentally. Au NPs were synthesised using the pulsed laser ablation method in distilled water. The suspended solution of the gold NPs was used as the electrolyte of EPD. An irradiation was carried out by the fundamental wavelength of a Q-switched NdYAG laser at 1064 nm and 7 ns pulse width. The electrophoretic deposition apparatus consisted of two 2 × 2 cm pieces of silver plates as the electrodes. They were immersed in parallel with a 7 mm gap in the gold NP suspension. Five samples of gold NP thin films were prepared at different deposition times and applied voltages. Results show that the roughness, thickness and surface quality of EPD prepared thin films can be strongly controlled by the deposition time and applied voltage. The thickness of deposited films was dependent on the voltage of deposition in which their roughness was increased with increasing the deposition time. Furthermore, the reflection of deposited films was affected by the surface roughness.

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来源期刊
Iet Optoelectronics
Iet Optoelectronics 工程技术-电信学
CiteScore
4.50
自引率
0.00%
发文量
26
审稿时长
6 months
期刊介绍: IET Optoelectronics publishes state of the art research papers in the field of optoelectronics and photonics. The topics that are covered by the journal include optical and optoelectronic materials, nanophotonics, metamaterials and photonic crystals, light sources (e.g. LEDs, lasers and devices for lighting), optical modulation and multiplexing, optical fibres, cables and connectors, optical amplifiers, photodetectors and optical receivers, photonic integrated circuits, photonic systems, optical signal processing and holography and displays. Most of the papers published describe original research from universities and industrial and government laboratories. However correspondence suggesting review papers and tutorials is welcomed, as are suggestions for special issues. IET Optoelectronics covers but is not limited to the following topics: Optical and optoelectronic materials Light sources, including LEDs, lasers and devices for lighting Optical modulation and multiplexing Optical fibres, cables and connectors Optical amplifiers Photodetectors and optical receivers Photonic integrated circuits Nanophotonics and photonic crystals Optical signal processing Holography Displays
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