垂直结构结控窄带硅光电探测器的仿真研究

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Guang-bin Zhang , Yu-jian Liu , Li Wang
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引用次数: 0

摘要

结控窄带肖特基光电探测器具有抗噪声能力强、结构简单、工作方式自供电等优点,在小光谱范围的光电系统中具有广泛的应用前景。本文对基于垂直硅肖特基结构的结控窄带光电探测器的工作机理进行了仿真研究。结果表明,器件的光谱响应主要由准中性区主导,而不是肖特基结构的耗尽区。加宽准中性区会使准中性区和耗尽区的峰值波长明显红移,抑制器件对短波长的响应。随着硅衬底掺杂浓度的增加,由于扩散长度的减小,可以观察到类似的现象。此外,增加表面复合速度也可以有效降低器件在1060nm波长处的量子效率。这些结果表明,长波长光的结控窄带光电探测器可以通过多种简单可行的方法实现,在未来的光电系统中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation-based investigation of junction-controlled narrow-band Si photodetector with vertical structure

Junction-controlled narrow-band Schottky photodetectors are very attractive in the optoelectronic systems that operate in a small spectral range, due to its high noise immunity, simple structure, and self-powered work mode. In this work, simulation was carried out to study the working mechanism of the junction-controlled narrow-band photodetector based on a vertical silicon Schottky structure. It is showed that the spectral response of the device is mainly dominated by the quasi-neutral region instead of the depletion region of the Schottky structure. Widening quasi-neutral region can obviously red-shift the peak wavelengths of both quasi-neutral region and depletion region, and suppress the device response to short wavelength light. As the doping concentration of the silicon substrate increases, a similar phenomenon can be observed due to the decrease of the diffusion length. Furthermore, increasing surface recombination velocity also can effectively reduce the quantum efficiency of the device at the wavelength <1060 nm. These results signify that junction-controlled narrow-band photodetectors of long-wavelength light can be realized by a variety of simple and feasible methods, indicating their promising application in future photoelectric systems.

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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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