层状GeI2:热电应用的宽禁带半导体

IF 4.1 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Archit Dhingra
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引用次数: 0

摘要

层状GeI2是一种二维宽带隙范德华半导体,理论上它是一种很有前途的热电应用材料。虽然实验推断的GeI2的间接光学带隙的值与现有的理论计算一致,但其作为热电材料的潜力仍然缺乏实验验证。从这个角度来看,讨论了最近的实验工作,旨在通过嵌入来研究其动力学性质并进一步调节其带隙。对其动力学性质的彻底理解阐明了该系统中电子-声子散射的程度,了解这一点对于为未来实现基于GeI2的热电器件的研究开辟道路至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Layered GeI2: A wide-bandgap semiconductor for thermoelectric applications–A perspective
Layered GeI2 is a two-dimensional wide-bandgap van der Waals semiconductor, which is theorized to be a promising material for thermoelectric applications. While the value of the experimentally extrapolated indirect optical bandgap of GeI2 is found to be consistent with the existing theoretical calculations, its potential as a thermoelectric material still lacks experimental validation. In this Perspective, recent experimental efforts aimed towards investigating its dynamical properties and tuning its bandgap further, via intercalation, are discussed. A thorough understanding of its dynamical properties elucidates the extent of electron-phonon scattering in this system, knowledge of which is crucial in order to open pathways for future studies aiming to realize GeI2-based thermoelectric devices.
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来源期刊
Frontiers in Nanotechnology
Frontiers in Nanotechnology Engineering-Electrical and Electronic Engineering
CiteScore
7.10
自引率
0.00%
发文量
96
审稿时长
13 weeks
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