{"title":"典型拓扑结构FeGa/AlN磁电器件的制备与性能研究","authors":"Xiao Zhang, Fan Li, Tianxin Wu, Jie Zhu","doi":"10.1007/s10948-023-06539-y","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, the mask method is applied to design a variety of topological structures in the magnetic layer. Different topological Mo/FeGa/AlN magnetoelectric (ME) devices were fabricated. Controlling the stress conduction mode between the magnetostrictive phase and the piezoelectric phase is one of the goals that enables the coexistence of normal stress and shear stress. In order to improve the ME performance of devices, the second purpose is to induce the ME anisotropy of devices through the magnetostrictive anisotropy caused by the topological structure. The circular topological Mo/FeGa/AlN devices produce the largest ME coupling coefficient along the length direction (7071 mV/cm Oe), which is 1.84 times higher than that of the planar devices (3853 mV/cm Oe). The maximum ME anisotropy coefficient (4.612) is determined from the strip topology ME device, which is 2.45 times higher than that of the planar device.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"36 3","pages":"1025 - 1032"},"PeriodicalIF":1.6000,"publicationDate":"2023-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation and Properties of FeGa/AlN Magnetoelectric Device with Typical Topological Structures\",\"authors\":\"Xiao Zhang, Fan Li, Tianxin Wu, Jie Zhu\",\"doi\":\"10.1007/s10948-023-06539-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, the mask method is applied to design a variety of topological structures in the magnetic layer. Different topological Mo/FeGa/AlN magnetoelectric (ME) devices were fabricated. Controlling the stress conduction mode between the magnetostrictive phase and the piezoelectric phase is one of the goals that enables the coexistence of normal stress and shear stress. In order to improve the ME performance of devices, the second purpose is to induce the ME anisotropy of devices through the magnetostrictive anisotropy caused by the topological structure. The circular topological Mo/FeGa/AlN devices produce the largest ME coupling coefficient along the length direction (7071 mV/cm Oe), which is 1.84 times higher than that of the planar devices (3853 mV/cm Oe). The maximum ME anisotropy coefficient (4.612) is determined from the strip topology ME device, which is 2.45 times higher than that of the planar device.</p></div>\",\"PeriodicalId\":669,\"journal\":{\"name\":\"Journal of Superconductivity and Novel Magnetism\",\"volume\":\"36 3\",\"pages\":\"1025 - 1032\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-03-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Superconductivity and Novel Magnetism\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10948-023-06539-y\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Superconductivity and Novel Magnetism","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s10948-023-06539-y","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Preparation and Properties of FeGa/AlN Magnetoelectric Device with Typical Topological Structures
In this work, the mask method is applied to design a variety of topological structures in the magnetic layer. Different topological Mo/FeGa/AlN magnetoelectric (ME) devices were fabricated. Controlling the stress conduction mode between the magnetostrictive phase and the piezoelectric phase is one of the goals that enables the coexistence of normal stress and shear stress. In order to improve the ME performance of devices, the second purpose is to induce the ME anisotropy of devices through the magnetostrictive anisotropy caused by the topological structure. The circular topological Mo/FeGa/AlN devices produce the largest ME coupling coefficient along the length direction (7071 mV/cm Oe), which is 1.84 times higher than that of the planar devices (3853 mV/cm Oe). The maximum ME anisotropy coefficient (4.612) is determined from the strip topology ME device, which is 2.45 times higher than that of the planar device.
期刊介绍：
The Journal of Superconductivity and Novel Magnetism serves as the international forum for the most current research and ideas in these fields. This highly acclaimed journal publishes peer-reviewed original papers, conference proceedings and invited review articles that examine all aspects of the science and technology of superconductivity, including new materials, new mechanisms, basic and technological properties, new phenomena, and small- and large-scale applications. Novel magnetism, which is expanding rapidly, is also featured in the journal. The journal focuses on such areas as spintronics, magnetic semiconductors, properties of magnetic multilayers, magnetoresistive materials and structures, magnetic oxides, etc. Novel superconducting and magnetic materials are complex compounds, and the journal publishes articles related to all aspects their study, such as sample preparation, spectroscopy and transport properties as well as various applications.
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