{"title":"锰原子对硅磁性能的影响","authors":"O. E. Sattarov, A. Mavlyanov, A. An","doi":"10.3103/S106837552302014X","DOIUrl":null,"url":null,"abstract":"<p>It has been shown that the state of manganese atoms in the silicon lattice can be controlled with a view to varying the state and pattern of the magnetoresistance of the material. The laws governing changes in the magnetoresistance of silicon with manganese atoms (single atoms and clusters) as a function of temperature, illumination, and electric field have been determined.</p>","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"59 2","pages":"216 - 219"},"PeriodicalIF":0.9000,"publicationDate":"2023-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Manganese Atoms on the Magnetic Properties of Silicon\",\"authors\":\"O. E. Sattarov, A. Mavlyanov, A. An\",\"doi\":\"10.3103/S106837552302014X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>It has been shown that the state of manganese atoms in the silicon lattice can be controlled with a view to varying the state and pattern of the magnetoresistance of the material. The laws governing changes in the magnetoresistance of silicon with manganese atoms (single atoms and clusters) as a function of temperature, illumination, and electric field have been determined.</p>\",\"PeriodicalId\":782,\"journal\":{\"name\":\"Surface Engineering and Applied Electrochemistry\",\"volume\":\"59 2\",\"pages\":\"216 - 219\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2023-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface Engineering and Applied Electrochemistry\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.3103/S106837552302014X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Engineering and Applied Electrochemistry","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.3103/S106837552302014X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
Effect of Manganese Atoms on the Magnetic Properties of Silicon
It has been shown that the state of manganese atoms in the silicon lattice can be controlled with a view to varying the state and pattern of the magnetoresistance of the material. The laws governing changes in the magnetoresistance of silicon with manganese atoms (single atoms and clusters) as a function of temperature, illumination, and electric field have been determined.
期刊介绍:
Surface Engineering and Applied Electrochemistry is a journal that publishes original and review articles on theory and applications of electroerosion and electrochemical methods for the treatment of materials; physical and chemical methods for the preparation of macro-, micro-, and nanomaterials and their properties; electrical processes in engineering, chemistry, and methods for the processing of biological products and food; and application electromagnetic fields in biological systems.