Sn掺杂对GeSn溅射外延的影响

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2023-08-29 DOI:10.35848/1882-0786/acf4df

N. Tanaka, M. Kuniyoshi, K. Abe, Masaki Hoshihara, Takuma Kobayashi, T. Shimura, Heiji Watanabe

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引用次数: 0

摘要

利用溅射沉积技术研究了高质量低锡锗合金的外延生长。在同时溅射沉积过程中加入数%的Sn，显著改善了GeSn合金的晶体结构，即使在室温下也能产生强烈的光致发光。在调整生长条件(即Sn/Ge通量比为6.2%，沉积温度为500℃)下，在Ge(100)衬底上形成了无位错的GeSn单晶薄膜，在薄膜厚度方向上自发形成了Sn含量的成分级配。从生长动力学和Sn在生长表面的扩散角度讨论了其生长机理。

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Impact of Sn incorporation on sputter epitaxy of GeSn

Epitaxial growth of high-quality low tin content germanium (GeSn) alloy is demonstrated by sputter deposition. Adding several percent of Sn during simultaneous sputter deposition significantly improved the crystallographic structure of the GeSn alloy, leading to intense photoluminescence even at room temperature. Dislocation-free single-crystal GeSn films were formed on a Ge(100) substrate under tuned growth conditions, that is, an Sn/Ge flux ratio of 6.2% and deposition temperature of 500 °C, in which compositional gradation of the Sn content in the film thickness direction spontaneously formed. The growth mechanisms are discussed based on growth kinetics and Sn diffusion on the growing surface.

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).