以最小化短通道效应为目的的双材料梯度沟道圆柱形栅极全能场效应管的解析建模

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2022-12-20 DOI:10.1007/s10825-022-01992-9

Praveen Kumar Mudidhe, Bheema Rao Nistala

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引用次数: 1

摘要

本文将栅极工程和沟道工程相结合，建立了双材料梯度沟道圆柱栅极全能场效应管(DMGC - CGAA)中心电位和阈值电压的解析模型。采用抛物线近似法在合适的边界条件下求解柱坐标下的二维泊松方程，确定了器件的电位分布。阈值电压(Vth)由通道中的最小中心电位计算得到。比较了单材料梯度通道圆柱栅极全能场效应晶体管(SMGC - CGAA)和DMGC - CGAA场效应晶体管(fet)的中心电势，并通过改变DMGC - CGAA场效应晶体管的不同器件参数确定了最优值。研究了阈值电压滚降(Vth)、热载子效应(HCE)和漏极势垒降低(DIBL)等短通道效应(SCEs)。研究了氧化物厚度(tox)和圆柱体直径(tsi)对Vth的影响。利用计算机辅助设计(TCAD)技术进行的仿真结果与模型计算结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analytical modeling of a dual-material graded-channel cylindrical gate-all-around FET to minimize the short-channel effects

In this paper, an analytical model for center potential and threshold voltage is developed for a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by integrating gate engineering and channel engineering. The potential distribution of the device is determined by solving the two-dimensional (2-D) Poisson equation in cylindrical coordinates with suitable boundary conditions by applying the parabolic approximation method. The threshold voltage (V_th) is calculated from the minimum center potential in the channel. The center potentials of single-material graded-channel cylindrical gate-all-around (SMGC CGAA) field effect transistors (FETs) and DMGC CGAA FETs are compared, and the optimum values are determined by varying the different device parameters of the DMGC CGAA FETs. The short-channel effects (SCEs) including threshold voltage (V_th) roll-off, hot carrier effect (HCE) and drain-induced barrier lowering (DIBL) are examined. The effects of oxide thickness (t_ox) and cylinder diameter (t_si) on the V_th are also investigated. The proposed model results are in agreement with the simulation results using technology computer-aided design (TCAD).

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.