{"title":"等离子体光栅结构增强gaas基光电探测器的光响应","authors":"Zhengzhou Ma, Ping Tang, Jiancai Xue, Jinyun Zhou","doi":"10.1007/s11468-023-01849-2","DOIUrl":null,"url":null,"abstract":"<div><p>Nanostructured metal–semiconductor-metal photodetectors (MSM-PDs) can assist in future high-speed communication devices for achieving high responsivity characteristics. However, such devices suffer from low responsivity due to low absorption, and the large band gap limits its detection range. Herein, we propose a GaAs-based photodetector with enhanced photoresponse by plasmonic Au-GaAs grating structure. The design of a grating structure on the surface of n-GaAs can excite a plasmon mode to enhance the photoelectric performance of photodetectors. Consequently, under 795?nm incident light irradiation, the grating hybrid detector exhibits a nearly 4.2-fold increase in photocurrent compared to the bare GaAs device. The enhanced absorption can be up to 99% and a specific responsivity of 240?mA/W is realized. These results can thus provide a potential scheme to fabricate high-performance GaAs detector for numerous applications.</p></div>","PeriodicalId":736,"journal":{"name":"Plasmonics","volume":"18 4","pages":"1571 - 1579"},"PeriodicalIF":3.3000,"publicationDate":"2023-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11468-023-01849-2.pdf","citationCount":"0","resultStr":"{\"title\":\"Enhancing Photoresponse of GaAs-Based Photodetector by Plasmon Grating Structures\",\"authors\":\"Zhengzhou Ma, Ping Tang, Jiancai Xue, Jinyun Zhou\",\"doi\":\"10.1007/s11468-023-01849-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Nanostructured metal–semiconductor-metal photodetectors (MSM-PDs) can assist in future high-speed communication devices for achieving high responsivity characteristics. However, such devices suffer from low responsivity due to low absorption, and the large band gap limits its detection range. Herein, we propose a GaAs-based photodetector with enhanced photoresponse by plasmonic Au-GaAs grating structure. The design of a grating structure on the surface of n-GaAs can excite a plasmon mode to enhance the photoelectric performance of photodetectors. Consequently, under 795?nm incident light irradiation, the grating hybrid detector exhibits a nearly 4.2-fold increase in photocurrent compared to the bare GaAs device. The enhanced absorption can be up to 99% and a specific responsivity of 240?mA/W is realized. These results can thus provide a potential scheme to fabricate high-performance GaAs detector for numerous applications.</p></div>\",\"PeriodicalId\":736,\"journal\":{\"name\":\"Plasmonics\",\"volume\":\"18 4\",\"pages\":\"1571 - 1579\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2023-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s11468-023-01849-2.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Plasmonics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11468-023-01849-2\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasmonics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11468-023-01849-2","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Enhancing Photoresponse of GaAs-Based Photodetector by Plasmon Grating Structures
Nanostructured metal–semiconductor-metal photodetectors (MSM-PDs) can assist in future high-speed communication devices for achieving high responsivity characteristics. However, such devices suffer from low responsivity due to low absorption, and the large band gap limits its detection range. Herein, we propose a GaAs-based photodetector with enhanced photoresponse by plasmonic Au-GaAs grating structure. The design of a grating structure on the surface of n-GaAs can excite a plasmon mode to enhance the photoelectric performance of photodetectors. Consequently, under 795?nm incident light irradiation, the grating hybrid detector exhibits a nearly 4.2-fold increase in photocurrent compared to the bare GaAs device. The enhanced absorption can be up to 99% and a specific responsivity of 240?mA/W is realized. These results can thus provide a potential scheme to fabricate high-performance GaAs detector for numerous applications.
期刊介绍：
Plasmonics is an international forum for the publication of peer-reviewed leading-edge original articles that both advance and report our knowledge base and practice of the interactions of free-metal electrons, Plasmons.
Topics covered include notable advances in the theory, Physics, and applications of surface plasmons in metals, to the rapidly emerging areas of nanotechnology, biophotonics, sensing, biochemistry and medicine. Topics, including the theory, synthesis and optical properties of noble metal nanostructures, patterned surfaces or materials, continuous or grated surfaces, devices, or wires for their multifarious applications are particularly welcome. Typical applications might include but are not limited to, surface enhanced spectroscopic properties, such as Raman scattering or fluorescence, as well developments in techniques such as surface plasmon resonance and near-field scanning optical microscopy.
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