基于非晶碳化硅超微电极阵列的神经接口

Felix Deku, A. Ghazavi, S. Cogan
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引用次数: 7

摘要

在开发下一代长期可靠的神经接口设备时,尺寸和材料方面的考虑很重要。在这篇综述中,我们讨论了非晶碳化硅(a-SiC)用于制造用于神经刺激和记录的具有超薄穿透柄的留置电极阵列。a-SiC膜在盐水环境中是稳定的,并且具有高的固有刚度,这允许制造具有极小横截面积(<60μm2)的组织穿透阵列。综述了目前关于具有极小柄和/或超微电极(UME)位点的阵列的文献。综述了a-SiC薄膜的性能及其在生物医学中的应用现状。柄部尺寸的减小增加了高杨氏模量a-SiC阵列的灵活性。氧化铱涂层的UME具有适合神经记录和刺激的电化学特性,并记录具有高振幅和高信噪比的神经信号。UME和a-SiC可以为下一代高密度慢性神经接口设备提供平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Neural interfaces based on amorphous silicon carbide ultramicroelectrode arrays
Size and material considerations are important in the development of next-generation chronically reliable neural interface devices. In this review, we discuss the use of amorphous silicon carbide (a-SiC) for the fabrication of indwelling electrode arrays with ultrathin penetrating shanks for neural stimulation and recording. The a-SiC film is stable in saline environments and has a high intrinsic stiffness that allows fabrication of tissue-penetrating arrays with extremely small cross-sectional areas (<60 μm2). Present literature on arrays with extremely small shanks and/or ultramicroelectrode (UME) sites are reviewed. Properties of a-SiC films and their current biomedical applications are summarized. Reduced shank dimensions increase the flexibility of high Young's modulus a-SiC arrays. Iridium oxide-coated UMEs had electrochemical properties suitable for neural recording and stimulation, and recorded neural signals with high amplitudes and high signal-to-noise ratios. UMEs and a-SiC may provide a platform for next-generation high-density chronic neural interface devices.
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