化学浴沉积法制备聚乙烯醇盖顶纳米晶CdSe薄膜的光学和电学性能研究

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2022-12-21 DOI:10.15251/cl.2022.1912.901

S. R. Devi, P. Saikia, M. Hussain

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引用次数: 0

摘要

以醋酸镉[Cd(CH3COO)2.3H2O]和硫酸钠(Na2SeSO3)分别作为Cd2+和Se2-离子源，采用化学浴沉积技术在化学清洁的玻璃衬底上沉积了pva包覆的纳米晶CdSe薄膜。聚乙烯醇(PVA)作为封盖剂。在室温298 K下制备了5种不同摩尔浓度(0.1 M-0.50M)的相同pH值8的薄膜。通过对制备的CdSe薄膜的光学和电学性能的测量，对其特性进行了详细的研究。根据光吸收光谱测定了带隙能量为2.16 ~ 2.49 eV。光学带隙随摩尔浓度的增加而减小。使用两个共面铝电极测量的电导率随着温度的升高而增加，显示出薄膜的半导体性质。室温下的电导率约为10-4 Ω-1 cm-1。

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Studies on optical and electrical properties of PVA capped nanocrystalline CdSe thin film prepared by chemical bath deposition method

PVA-capped nanocrystalline CdSe thin films are deposited on chemically clean glass substrates by chemical bath deposition technique using Cadmium acetate [Cd(CH3COO)2.3H2O and Sodium Selenosulfate (Na2SeSO3) as Cd2+ and Se2- ions sources respectively. Polyvinyl Alcohol (PVA) is act as a capping agent. Films of five different molarities (0.1 M–0.50M) of same pH value 8 were prepared at room temperature 298 K. The characteristics of the prepared CdSe thin films are investigated in detail by measuring their optical and electrical properties. The band gap energy of 2.16–2.49 eV was determined from the optical absorption spectra. The optical band gap decrease with increase in molarities. The electrical conductivity measured using two co-planar Aluminium electrodes are found to increase with increase in temperature showing semiconducting nature of the films. The electrical conductivity at room temperature is found to be of the order of 10-4 Ω-1 cm-1 .

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.