{"title":"(AgxCu1 - x) 2znsns4基薄膜异质结:CdS沉积方法的影响","authors":"L. Dermenji, N. Curmei, G. Gurieva, L. Bruc","doi":"10.3103/S1068375521030054","DOIUrl":null,"url":null,"abstract":"<p>Cu<sub>2</sub>ZnSnSe<sub>4</sub> (CZTSe) based solar cells, containing abundant elements, with Ag alloying have recently reached efficiency of 10.2%. The open circuit voltage in CZTSe devices is believed to be limited, in between other factors, by strong band tailing caused by an exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSe with Ag, whose covalent radius is 15% larger than that of Cu and Zn, the density of I–II antisite defects (e.g., Cu–Zn disorder) is predicted to drop. In the present work, (Ag<sub><i>x</i></sub>Cu<sub>1 – <i>x</i></sub>)<sub>2</sub>ZnSnS<sub>4</sub> (ACZTS) heterostructures in three different architectures were investigated. The 5 and 10% silver substituted CZTS absorber layers were obtained by low-cost spray pyrolysis technique, as well as three different methods for the CdS layer deposition were tested in order to optimize the ACZTS heterostructure efficiency.</p>","PeriodicalId":49315,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"57 3","pages":"323 - 329"},"PeriodicalIF":1.1000,"publicationDate":"2021-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"(AgxCu1 – x)2ZnSnS4-Based Thin Film Heterojunctions: Influence of CdS Deposition Method\",\"authors\":\"L. Dermenji, N. Curmei, G. Gurieva, L. Bruc\",\"doi\":\"10.3103/S1068375521030054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Cu<sub>2</sub>ZnSnSe<sub>4</sub> (CZTSe) based solar cells, containing abundant elements, with Ag alloying have recently reached efficiency of 10.2%. The open circuit voltage in CZTSe devices is believed to be limited, in between other factors, by strong band tailing caused by an exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSe with Ag, whose covalent radius is 15% larger than that of Cu and Zn, the density of I–II antisite defects (e.g., Cu–Zn disorder) is predicted to drop. In the present work, (Ag<sub><i>x</i></sub>Cu<sub>1 – <i>x</i></sub>)<sub>2</sub>ZnSnS<sub>4</sub> (ACZTS) heterostructures in three different architectures were investigated. The 5 and 10% silver substituted CZTS absorber layers were obtained by low-cost spray pyrolysis technique, as well as three different methods for the CdS layer deposition were tested in order to optimize the ACZTS heterostructure efficiency.</p>\",\"PeriodicalId\":49315,\"journal\":{\"name\":\"Surface Engineering and Applied Electrochemistry\",\"volume\":\"57 3\",\"pages\":\"323 - 329\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2021-07-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface Engineering and Applied Electrochemistry\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.3103/S1068375521030054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ELECTROCHEMISTRY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Engineering and Applied Electrochemistry","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.3103/S1068375521030054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
(AgxCu1 – x)2ZnSnS4-Based Thin Film Heterojunctions: Influence of CdS Deposition Method
Cu2ZnSnSe4 (CZTSe) based solar cells, containing abundant elements, with Ag alloying have recently reached efficiency of 10.2%. The open circuit voltage in CZTSe devices is believed to be limited, in between other factors, by strong band tailing caused by an exceptionally high density of Cu/Zn antisites. By replacing Cu in CZTSe with Ag, whose covalent radius is 15% larger than that of Cu and Zn, the density of I–II antisite defects (e.g., Cu–Zn disorder) is predicted to drop. In the present work, (AgxCu1 – x)2ZnSnS4 (ACZTS) heterostructures in three different architectures were investigated. The 5 and 10% silver substituted CZTS absorber layers were obtained by low-cost spray pyrolysis technique, as well as three different methods for the CdS layer deposition were tested in order to optimize the ACZTS heterostructure efficiency.
期刊介绍：
Surface Engineering and Applied Electrochemistry is a journal that publishes original and review articles on theory and applications of electroerosion and electrochemical methods for the treatment of materials; physical and chemical methods for the preparation of macro-, micro-, and nanomaterials and their properties; electrical processes in engineering, chemistry, and methods for the processing of biological products and food; and application electromagnetic fields in biological systems.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
