phbhf1−x Sn x O 3陶瓷的高温介电性能和阻抗谱

IF 3.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhi-Gang Liu, Peng-Zu Ge, Hui Tang, Xin-Gui Tang, Si-Ming Zeng, Yan-Ping Jiang, Zhen-Hua Tang, Qiu-Xiang Liu
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引用次数: 9

摘要

采用传统的固相反应方法合成了PbHf1−x Sn x O3(PSH)陶瓷。在20–650°C的温度范围内研究了介电性能。随着Sn4+含量的增加,反铁电(AFE1)到另一个中间反铁电(AF E2)相以及AFE2到顺电(PE)相的相变温度逐渐降低。当x≥0.1时,PSH陶瓷在225°C左右出现铁电相,随着Sn4+浓度的增加,铁电相向PE相的相变温度升高。此外,从所有样品中都可以看到高温介电弛豫(HTDR)现象。从PSH陶瓷的阻抗谱和电导率两个方面探讨了HTDR的形成机理。研究发现,在复阻抗图中观察到三种介电响应,HTDR与氧空位的运动有关。根据介电数据计算的活化能表明,HTDR受跳跃传导过程的控制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-temperature dielectric properties and impedance spectroscopy of PbHf1−x Snx O3 ceramics

PbHf1−x Snx O3 (PSH) ceramics were synthesised by a conventional solid-state reaction method. Dielectric properties were investigated in the temperature range of 20–650°C. As the Sn4+ content goes up, the phase transition temperatures of an antiferroelectric (AFE1) to another intermediate antiferroelectric (AFE2) phase and AFE2 to the paraelectric (PE) phase decrease gradually. When x ≥0.1 for PSH ceramics, the ferroelectric (FE) phase appears around 225°C, and phase transition temperature from FE phase to PE phase goes up with the increasing concentration of Sn4+. Moreover, high-temperature dielectric relaxation (HTDR) phenomenon can be seen from all samples. Mechanism of HTDR was discussed from impedance spectroscopy and conductivity for PSH ceramics. It was found that three dielectric responses were observed in complex impedance plots and HTDR was involved with the movement of oxygen vacancies. Activation energy calculated from dielectric data suggested that the HTDR was governed by the hopping conduction process.

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来源期刊
IET Nanodielectrics
IET Nanodielectrics Materials Science-Materials Chemistry
CiteScore
5.60
自引率
3.70%
发文量
7
审稿时长
21 weeks
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