接地栅极屏蔽LDMOS中热载流子抗扰度和鲁棒性的设计权衡

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Active and Passive Electronic Components Pub Date : 2019-11-20 DOI:10.1155/2019/1928494

Haifeng Mo, Yaohui Zhang, Helun Song

{"title":"接地栅极屏蔽LDMOS中热载流子抗扰度和鲁棒性的设计权衡","authors":"Haifeng Mo, Yaohui Zhang, Helun Song","doi":"10.1155/2019/1928494","DOIUrl":null,"url":null,"abstract":"LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-field distribution on drain side for robustness as well. Design trade off of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2019-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/1928494","citationCount":"0","resultStr":"{\"title\":\"Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield\",\"authors\":\"Haifeng Mo, Yaohui Zhang, Helun Song\",\"doi\":\"10.1155/2019/1928494\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-field distribution on drain side for robustness as well. Design trade off of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data.\",\"PeriodicalId\":43355,\"journal\":{\"name\":\"Active and Passive Electronic Components\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2019-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1155/2019/1928494\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Active and Passive Electronic Components\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2019/1928494\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2019/1928494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

对不同接地栅极屏蔽结构的LDMOS器件进行了仿真和测试，旨在同时解决热载流子抗扰性和鲁棒性问题。优化的接地栅极屏蔽结构配置可以降低栅极-漏极重叠处的局部电场强度，从而获得更好的热载流子抗扰度;通过仿真和实测数据分析了热载波抗扰性和鲁棒性的设计权衡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield

LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-field distribution on drain side for robustness as well. Design trade off of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.