GaN级联码的寿命模型调整作为逆变器寿命估计的基础

Power electronic devices and components Pub Date : 2023-06-01 DOI:10.1016/j.pedc.2023.100039

Florian Lippold, Regine Mallwitz

{"title":"GaN级联码的寿命模型调整作为逆变器寿命估计的基础","authors":"Florian Lippold, Regine Mallwitz","doi":"10.1016/j.pedc.2023.100039","DOIUrl":null,"url":null,"abstract":"<div><p>Lifetime models for GaN power semiconductors are essential for a reliable and long-term stable design of complete power electronics systems. Load power cycling investigates the connections between the semiconductor chip, the package and the system. In this paper, various GaN cascodes in TO-247 packages were cycled. The results were analyzed, so that empiric lifetime models could be derived. The aging of bond wires is mainly the cause for the end of life and therefore the Coffin-Manson-Approach can be used for the GaN lifetime modelling. The lifetime of an inverter equipped with this GaN devices is estimated and is assessed as being high.</p></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"5 ","pages":"Article 100039"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lifetime model adjustments for GaN cascodes as a base for inverter lifetime estimation\",\"authors\":\"Florian Lippold, Regine Mallwitz\",\"doi\":\"10.1016/j.pedc.2023.100039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Lifetime models for GaN power semiconductors are essential for a reliable and long-term stable design of complete power electronics systems. Load power cycling investigates the connections between the semiconductor chip, the package and the system. In this paper, various GaN cascodes in TO-247 packages were cycled. The results were analyzed, so that empiric lifetime models could be derived. The aging of bond wires is mainly the cause for the end of life and therefore the Coffin-Manson-Approach can be used for the GaN lifetime modelling. The lifetime of an inverter equipped with this GaN devices is estimated and is assessed as being high.</p></div>\",\"PeriodicalId\":74483,\"journal\":{\"name\":\"Power electronic devices and components\",\"volume\":\"5 \",\"pages\":\"Article 100039\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Power electronic devices and components\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S277237042300007X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Power electronic devices and components","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S277237042300007X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

GaN功率半导体的寿命模型对于完整电力电子系统的可靠和长期稳定设计至关重要。负载功率循环研究半导体芯片、封装和系统之间的连接。本文对TO-247封装中的各种GaN级联码进行了循环。对结果进行了分析，从而推导出经验寿命模型。结合线的老化是导致寿命终止的主要原因，因此coffin - manson方法可用于GaN寿命建模。配备这种GaN器件的逆变器的寿命被估计并被评估为高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Lifetime model adjustments for GaN cascodes as a base for inverter lifetime estimation

Lifetime models for GaN power semiconductors are essential for a reliable and long-term stable design of complete power electronics systems. Load power cycling investigates the connections between the semiconductor chip, the package and the system. In this paper, various GaN cascodes in TO-247 packages were cycled. The results were analyzed, so that empiric lifetime models could be derived. The aging of bond wires is mainly the cause for the end of life and therefore the Coffin-Manson-Approach can be used for the GaN lifetime modelling. The lifetime of an inverter equipped with this GaN devices is estimated and is assessed as being high.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days