用Cr Kα光子研究硅上GaN薄膜的HAXPES

IF 1.6 Q3 PHYSICS, CONDENSED MATTER

Surface Science Spectra Pub Date : 2021-06-09 DOI:10.1116/6.0000888

A. Vanleenhove, C. Zborowski, I. Vaesen, I. Hoflijk, T. Conard

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引用次数: 1

摘要

利用高分辨率高能x射线光电子能谱（HAXPES）对金属有机化学气相沉积在硅上生长的氮化镓（GaN）进行了分析。5414.7下用单色Cr Kα辐射获得的GaN的HAXPES光谱 eV包括Ga3d、Ga2p3/2、Ga3p、Ga-LMM、N1s、C1s和O1s的测量扫描（Al Kα）和高分辨率光谱。

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HAXPES of GaN film on Si with Cr Kα photons

Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr Kα radiation at 5414.7 eV include a survey scan (Al Kα) and high-resolution spectra of Ga 3d, Ga 2p3/2, Ga 3p, Ga LMM, N 1s, C 1s, and O 1s.

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来源期刊

Surface Science Spectra PHYSICS, CONDENSED MATTER-

CiteScore

1.90

自引率

7.70%

发文量