用FTIR和拉曼光谱分析多孔硅结构

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electrical Engineering-elektrotechnicky Casopis Pub Date : 2023-06-01 DOI:10.2478/jee-2023-0028

M. Králik, M. Kopani

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引用次数: 0

摘要

本文研究了电化学蚀刻法制备多孔硅样品，并用FTIR和拉曼光谱对样品进行了分析。在不同的蚀刻时间和电流密度条件下制备多孔硅样品。采用p型硅衬底制备多孔硅结构。用红外光谱法测定了蚀刻过程中形成的化学键。用拉曼光谱分析了制备样品的结构性质。

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Analysis of porous silicon structures using FTIR and Raman spectroscopy

Abstract This work deals with the production of porous silicon samples by electrochemical etching method and their analysis using FTIR and Raman spectroscopy. Porous silicon samples were prepared under various conditions, such as etching time and current density. A p-type silicon substrate was used to prepare the porous silicon structures. FTIR spectroscopy was performed to determine the chemical bonds formed during the etching process. The structural properties of the prepared samples were investigated by Raman spectroscopy.

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来源期刊

Journal of Electrical Engineering-elektrotechnicky Casopis 工程技术-工程：电子与电气

CiteScore

1.70

自引率

12.50%

发文量

审稿时长

6-12 weeks

期刊介绍： The joint publication of the Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, and of the Slovak Academy of Sciences, Institute of Electrical Engineering, is a wide-scope journal published bimonthly and comprising. -Automation and Control- Computer Engineering- Electronics and Microelectronics- Electro-physics and Electromagnetism- Material Science- Measurement and Metrology- Power Engineering and Energy Conversion- Signal Processing and Telecommunications