降低高压电源模块临界电场的新型陶瓷基板结构

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Packaging Pub Date : 2022-02-19 DOI:10.1115/1.4053891

Feifei Yan, Laili Wang, Yongmei Gan, Kaixuan Li, Boya Zhang

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引用次数: 2

摘要

碳化硅（SiC）的阻断电压水平可以达到10至25 kV，这将显著提高功率模块的功率密度和容量。然而，高电压会引起高电场，增加局部放电的风险，并威胁绝缘可靠性。本文重点研究了功率模块中金属电极、硅胶和陶瓷之间的三重点。充分分析了不同三相点电场的影响因素。进行了局部放电实验，结果表明硅胶和陶瓷之间的界面是绝缘的薄弱区域。因此，本文证明了弱绝缘区和高电场区在三点相交。为了解决这个问题，提出了一种新的陶瓷衬底结构，该结构将界面区域与高电场隔离。同时，新结构可以显著减少高电场增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A New Structure of Ceramic Substrate to Reduce the Critical Electric Field in High Voltage Power Modules

The blocking voltage level of silicon carbide (SiC) can reach 10 to 25 kV, which will significantly increase the power density and capacity of power modules. However, high voltage can induce high electric field, increase the risk of partial discharge (PD) and threaten the insulation reliability. This paper focuses on the triple points between the metal electrode, silicone gel, and ceramic in power modules. The influencing factors of electric field at different triple points are fully analyzed. PD experiments are performed and the results show that interface between silicone gel and ceramic is a weak area of insulation. Therefore, this paper demonstrates that area of weak insulation and high electric field meet at the triple point. To solve this problem, a new structure of ceramic substrate is proposed, which isolates the interface area from high electric field. At the same time, the new structure can significantly reduce the high electric field reinforcement.

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来源期刊

Journal of Electronic Packaging 工程技术-工程：电子与电气

CiteScore

4.90

自引率

6.20%

发文量

审稿时长

3 months

期刊介绍： The Journal of Electronic Packaging publishes papers that use experimental and theoretical (analytical and computer-aided) methods, approaches, and techniques to address and solve various mechanical, materials, and reliability problems encountered in the analysis, design, manufacturing, testing, and operation of electronic and photonics components, devices, and systems. Scope: Microsystems packaging; Systems integration; Flexible electronics; Materials with nano structures and in general small scale systems.