金属辅助化学蚀刻同时制备微纳米级硅

IF 1 Q4 ENGINEERING, MANUFACTURING
Raul Lema Galindo, P. Ajay, S. V. Sreenivasan
{"title":"金属辅助化学蚀刻同时制备微纳米级硅","authors":"Raul Lema Galindo, P. Ajay, S. V. Sreenivasan","doi":"10.1115/1.4062167","DOIUrl":null,"url":null,"abstract":"\n Simultaneous micro and nanoscale etching of silicon on a wafer-scale is nowadays performed using plasma etching techniques. These plasma techniques, however, suffer from low throughput due to Aspect-Ratio Dependent Etch (ARDE) rate, etch lag from changes in feature size, loading effects from increased etch area, and undesirable surface characteristics such as sidewall taper and scalloping, which are particularly problematic at the nanoscale and can affect the etch uniformity. Additionally, the hardware required for plasma etching can be very expensive. A potential alternative, which addresses the above issues with plasma etching is Metal Assisted Chemical Etch (MacEtch). To date, however, an integrated micro and nanoscale MacEtch process, which has uniform and clean (i.e. without nanowire-like defects in microscale areas) etch front has not been presented in the literature. In this work, we present for the first time a feasible process flow for simultaneous micro and nanoscale silicon etching without nanowire-like defects, which we call Integrated Micro- and Nanoscale MacEtch (IMN-MacEtch). Successful etching of silicon features ranging from 100 nm to 100 µm was achieved with etch rates of about 1.8 µm/min in a single step to achieve features with an Aspect Ratio (AR) ~18:1. We thus conclude that the process represents a feasible alternative to current dry etch methods for patterning feature sizes spanning three orders of magnitude.","PeriodicalId":45459,"journal":{"name":"Journal of Micro and Nano-Manufacturing","volume":null,"pages":null},"PeriodicalIF":1.0000,"publicationDate":"2023-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simultaneous Micro- and Nanoscale Silicon Fabrication by Metal-Assisted Chemical Etch\",\"authors\":\"Raul Lema Galindo, P. Ajay, S. V. Sreenivasan\",\"doi\":\"10.1115/1.4062167\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Simultaneous micro and nanoscale etching of silicon on a wafer-scale is nowadays performed using plasma etching techniques. These plasma techniques, however, suffer from low throughput due to Aspect-Ratio Dependent Etch (ARDE) rate, etch lag from changes in feature size, loading effects from increased etch area, and undesirable surface characteristics such as sidewall taper and scalloping, which are particularly problematic at the nanoscale and can affect the etch uniformity. Additionally, the hardware required for plasma etching can be very expensive. A potential alternative, which addresses the above issues with plasma etching is Metal Assisted Chemical Etch (MacEtch). To date, however, an integrated micro and nanoscale MacEtch process, which has uniform and clean (i.e. without nanowire-like defects in microscale areas) etch front has not been presented in the literature. In this work, we present for the first time a feasible process flow for simultaneous micro and nanoscale silicon etching without nanowire-like defects, which we call Integrated Micro- and Nanoscale MacEtch (IMN-MacEtch). Successful etching of silicon features ranging from 100 nm to 100 µm was achieved with etch rates of about 1.8 µm/min in a single step to achieve features with an Aspect Ratio (AR) ~18:1. We thus conclude that the process represents a feasible alternative to current dry etch methods for patterning feature sizes spanning three orders of magnitude.\",\"PeriodicalId\":45459,\"journal\":{\"name\":\"Journal of Micro and Nano-Manufacturing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Micro and Nano-Manufacturing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1115/1.4062167\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, MANUFACTURING\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micro and Nano-Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1115/1.4062167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, MANUFACTURING","Score":null,"Total":0}
引用次数: 0

摘要

目前在晶圆尺度上同时进行微纳米尺度的硅蚀刻是使用等离子体蚀刻技术。然而,这些等离子体技术由于宽高比相关蚀刻(ARDE)速率、特征尺寸变化导致的蚀刻滞后、蚀刻面积增加带来的负载效应以及不希望的表面特性(如侧壁锥度和扇形)而遭受低吞吐量的困扰,这些特性在纳米尺度上尤其成问题,并可能影响蚀刻均匀性。此外,等离子体蚀刻所需的硬件可能非常昂贵。金属辅助化学蚀刻(MacEtch)是一种潜在的替代方案,可以解决等离子体蚀刻的上述问题。然而,迄今为止,在文献中还没有提出一种集成的微纳米尺度MacEtch工艺,该工艺具有均匀和清洁的蚀刻前沿(即在微尺度区域没有纳米线状缺陷)。在这项工作中,我们首次提出了一种可行的工艺流程,可以同时进行微纳米级硅蚀刻,而不存在纳米线状缺陷,我们称之为集成微纳米蚀刻(IMN-MacEtch)。在单步蚀刻速率约为1.8 μ m/min的情况下,成功蚀刻了100 nm ~ 100µm的硅特征,获得了宽高比(AR) ~18:1的特征。因此,我们得出结论,该工艺代表了当前干蚀刻方法的可行替代方案,用于图案特征尺寸跨越三个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simultaneous Micro- and Nanoscale Silicon Fabrication by Metal-Assisted Chemical Etch
Simultaneous micro and nanoscale etching of silicon on a wafer-scale is nowadays performed using plasma etching techniques. These plasma techniques, however, suffer from low throughput due to Aspect-Ratio Dependent Etch (ARDE) rate, etch lag from changes in feature size, loading effects from increased etch area, and undesirable surface characteristics such as sidewall taper and scalloping, which are particularly problematic at the nanoscale and can affect the etch uniformity. Additionally, the hardware required for plasma etching can be very expensive. A potential alternative, which addresses the above issues with plasma etching is Metal Assisted Chemical Etch (MacEtch). To date, however, an integrated micro and nanoscale MacEtch process, which has uniform and clean (i.e. without nanowire-like defects in microscale areas) etch front has not been presented in the literature. In this work, we present for the first time a feasible process flow for simultaneous micro and nanoscale silicon etching without nanowire-like defects, which we call Integrated Micro- and Nanoscale MacEtch (IMN-MacEtch). Successful etching of silicon features ranging from 100 nm to 100 µm was achieved with etch rates of about 1.8 µm/min in a single step to achieve features with an Aspect Ratio (AR) ~18:1. We thus conclude that the process represents a feasible alternative to current dry etch methods for patterning feature sizes spanning three orders of magnitude.
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来源期刊
Journal of Micro and Nano-Manufacturing
Journal of Micro and Nano-Manufacturing ENGINEERING, MANUFACTURING-
CiteScore
2.70
自引率
0.00%
发文量
12
期刊介绍: The Journal of Micro and Nano-Manufacturing provides a forum for the rapid dissemination of original theoretical and applied research in the areas of micro- and nano-manufacturing that are related to process innovation, accuracy, and precision, throughput enhancement, material utilization, compact equipment development, environmental and life-cycle analysis, and predictive modeling of manufacturing processes with feature sizes less than one hundred micrometers. Papers addressing special needs in emerging areas, such as biomedical devices, drug manufacturing, water and energy, are also encouraged. Areas of interest including, but not limited to: Unit micro- and nano-manufacturing processes; Hybrid manufacturing processes combining bottom-up and top-down processes; Hybrid manufacturing processes utilizing various energy sources (optical, mechanical, electrical, solar, etc.) to achieve multi-scale features and resolution; High-throughput micro- and nano-manufacturing processes; Equipment development; Predictive modeling and simulation of materials and/or systems enabling point-of-need or scaled-up micro- and nano-manufacturing; Metrology at the micro- and nano-scales over large areas; Sensors and sensor integration; Design algorithms for multi-scale manufacturing; Life cycle analysis; Logistics and material handling related to micro- and nano-manufacturing.
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