Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mΩ power device technology

This work reports on the static and dynamic performance of the state-of-the-art 650 V ICeGaN™ (Integrated Circuit Enhancement GaN) power switch with an ON-state resistance R_on of 200 mΩ. Through the monolithic integration of a novel gate interface with a p-GaN HEMT, these switches operate on a wide operational gate voltage window up to 20 V, making them exceptional in their compatibility with standard Si gate drivers or controller chips. Along with enhanced gate reliability, the devices demonstrate excellent static and switching performance with a high breakdown voltage and very low output charge (Q_oss) and gate charge (Q_g) metrics. They display minimal parameter drifts after 48 h of High Temperature Reverse Bias (HTRB) stress, validating the off-state reliability performance.