{"title":"基于全无机钙钛矿忆阻器的人工突触在神经形态计算中的应用","authors":"Fang Luo, Wen-Min Zhong, Xin-Gui Tang, Jia-Ying Chen, Yan-Ping Jiang, Qiu-Xiang Liu","doi":"10.1016/j.nanoms.2023.01.003","DOIUrl":null,"url":null,"abstract":"<div><p>Artificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence. The memristor is an ideal artificial synaptic device with fast operation and good tolerance. Here, we have prepared a memristor device with Au/CsPbBr<sub>3</sub>/ITO structure. The memristor device exhibits resistance switching behavior, the high and low resistance states no obvious decline after 400 switching times. The memristor device is stimulated by voltage pulses to simulate biological synaptic plasticity, such as long-term potentiation, long-term depression, pair-pulse facilitation, short-term depression, and short-term potentiation. The transformation from short-term memory to long-term memory is achieved by changing the stimulation frequency. In addition, a convolutional neural network was constructed to train/recognize MNIST handwritten data sets; a distinguished recognition accuracy of ∼96.7% on the digital image was obtained in 100 epochs, which is more accurate than other memristor-based neural networks. These results show that the memristor device based on CsPbBr<sub>3</sub> has immense potential in the neuromorphic computing system.</p></div>","PeriodicalId":33573,"journal":{"name":"Nano Materials Science","volume":"6 1","pages":"Pages 68-76"},"PeriodicalIF":9.9000,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S258996512300003X/pdfft?md5=0f4b1eada7fa50cb1b74d8992fd979b9&pid=1-s2.0-S258996512300003X-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Application of artificial synapse based on all-inorganic perovskite memristor in neuromorphic computing\",\"authors\":\"Fang Luo, Wen-Min Zhong, Xin-Gui Tang, Jia-Ying Chen, Yan-Ping Jiang, Qiu-Xiang Liu\",\"doi\":\"10.1016/j.nanoms.2023.01.003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Artificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence. The memristor is an ideal artificial synaptic device with fast operation and good tolerance. Here, we have prepared a memristor device with Au/CsPbBr<sub>3</sub>/ITO structure. The memristor device exhibits resistance switching behavior, the high and low resistance states no obvious decline after 400 switching times. The memristor device is stimulated by voltage pulses to simulate biological synaptic plasticity, such as long-term potentiation, long-term depression, pair-pulse facilitation, short-term depression, and short-term potentiation. The transformation from short-term memory to long-term memory is achieved by changing the stimulation frequency. In addition, a convolutional neural network was constructed to train/recognize MNIST handwritten data sets; a distinguished recognition accuracy of ∼96.7% on the digital image was obtained in 100 epochs, which is more accurate than other memristor-based neural networks. These results show that the memristor device based on CsPbBr<sub>3</sub> has immense potential in the neuromorphic computing system.</p></div>\",\"PeriodicalId\":33573,\"journal\":{\"name\":\"Nano Materials Science\",\"volume\":\"6 1\",\"pages\":\"Pages 68-76\"},\"PeriodicalIF\":9.9000,\"publicationDate\":\"2024-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S258996512300003X/pdfft?md5=0f4b1eada7fa50cb1b74d8992fd979b9&pid=1-s2.0-S258996512300003X-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Materials Science\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S258996512300003X\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Materials Science","FirstCategoryId":"1089","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S258996512300003X","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}
Application of artificial synapse based on all-inorganic perovskite memristor in neuromorphic computing
Artificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence. The memristor is an ideal artificial synaptic device with fast operation and good tolerance. Here, we have prepared a memristor device with Au/CsPbBr3/ITO structure. The memristor device exhibits resistance switching behavior, the high and low resistance states no obvious decline after 400 switching times. The memristor device is stimulated by voltage pulses to simulate biological synaptic plasticity, such as long-term potentiation, long-term depression, pair-pulse facilitation, short-term depression, and short-term potentiation. The transformation from short-term memory to long-term memory is achieved by changing the stimulation frequency. In addition, a convolutional neural network was constructed to train/recognize MNIST handwritten data sets; a distinguished recognition accuracy of ∼96.7% on the digital image was obtained in 100 epochs, which is more accurate than other memristor-based neural networks. These results show that the memristor device based on CsPbBr3 has immense potential in the neuromorphic computing system.
期刊介绍:
Nano Materials Science (NMS) is an international and interdisciplinary, open access, scholarly journal. NMS publishes peer-reviewed original articles and reviews on nanoscale material science and nanometer devices, with topics encompassing preparation and processing; high-throughput characterization; material performance evaluation and application of material characteristics such as the microstructure and properties of one-dimensional, two-dimensional, and three-dimensional nanostructured and nanofunctional materials; design, preparation, and processing techniques; and performance evaluation technology and nanometer device applications.